SiHD5N50D
D Series Power MOSFET
FEATURES
PRODUCT SUMMARY
• Optimal Design
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
Qg (max.) (nC)
550
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss
VGS = 10 V
1.5
)
20
3
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
Qgs (nC)
Qgd (nC)
5
Configuration
Single
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
D
- Fast Switching
• Material categorization: For definitions of compliance
please see
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DPAK
(TO-252)
APPLICATIONS
• Consumer Electronics
G
D
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
S
S
G
- Welding
N-Channel MOSFET
- Induction Heating
- Motor Drives
• Battery Chargers
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
SiHD5N50D-E3
Lead (Pb)-free and Halogen-free
SiHD5N50D-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VDS
500
30
V
VGS
30
5.3
T
C = 25 °C
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
ID
TC =100 °C
3.4
A
Pulsed Drain Currenta
IDM
10
Linear Derating Factor
Single Pulse Avalanche Energyb
0.83
23
W/°C
mJ
W
EAS
PD
Maximum Power Dissipation
104
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt (d)
TJ, Tstg
- 55 to + 150
24
°C
TJ = 125 °C
dV/dt
V/ns
°C
0.28
300
Soldering Recommendations (Peak Temperature)c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 4.5 A.
c. 1.6 mm from case.
d. ISD ID, starting TJ = 25 °C.
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