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SI9430DY PDF预览

SI9430DY

更新时间: 2024-11-11 22:33:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 401K
描述
Single P-Channel Enhancement Mode MOSFET

SI9430DY 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT包装说明:SOIC-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.78
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):5.8 A
最大漏极电流 (ID):5.8 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e0元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI9430DY 数据手册

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June 1999  
DISTRIBUTION GROUP*  
Si9430DY  
Single P-Channel Enhancement Mode MOSFET  
General Description  
Features  
This P-Channel Enhancement Mode MOSFET is produced  
using Fairchild Semiconductor's advance process that  
has been especially tailored to minimize on-state  
resistance and yet maintain superior switching  
performance.  
• -5.8 A, -20 V. RDS(on) = 0.050 Ω @ VGS = -10 V  
RDS(on) = 0.090 Ω @ VGS = -4.5 V.  
• Low gate charge.  
• Fast switching speed.  
This device is well suited for low voltage and battery  
powered applications where low in-line power loss  
and fast switching are required.  
• High power and current handling capability.  
Applications  
• Battery switch  
• Load switch  
• Motor controls  
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Si9430DY Rev. A  
1999 Fairchild Semiconductor Corporation  

SI9430DY 替代型号

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