Datasheet > SI9433BDY-T1-GE3

SI9433BDY-T1-GE3

更新时间： 2024-11-12 22:55:11

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威世 - VISHAY		/
页数	文件大小	规格书
8页	175K
描述
MOSFET P-CH 20V 4.5A 8-SOIC

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SI9433BDY-T1-GE3 数据手册

Si9433BDY

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)(Ω)

I_D(A)

- 6.2

- 5.0

0.040 at V_GS= - 4.5 V

0.060 at V_GS= - 2.7 V

•

Compliant to RoHS Directive 2002/95/EC

- 20

SO-8

Top View

Ordering Information: Si9433BDY-T1-E3 (Lead (Pb)-free)

Si9433BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 20

V_GS

T_A= 25 °C

T_A= 70 °C

- 6.2

- 5.0

- 4.5

- 3.5

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

- 20

Continuous Source Current (Diode Conduction)^a

- 2.3

2.5

- 1.2

1.3

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^a

P_D

1.6

0.8

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Maximum Junction-to-Ambient^a

R_thJA

Steady State

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface Mounted on FR4 board, t ≤ 10 s.

Document Number: 72755

S09-0870-Rev. B, 18-May-09

www.vishay.com

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SI9433BDY-T1-GE3 替代型号

型号	品牌	替代类型	描述	数据表
IRF7425PBF	INFINEON	功能相似	HEXFET Power MOSFET

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