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SI9434BDY-E3 PDF预览

SI9434BDY-E3

更新时间: 2024-11-12 19:51:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 79K
描述
Transistor

SI9434BDY-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.82
配置:Single最大漏极电流 (Abs) (ID):4.5 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
湿度敏感等级:1工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.5 W子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

SI9434BDY-E3 数据手册

 浏览型号SI9434BDY-E3的Datasheet PDF文件第2页浏览型号SI9434BDY-E3的Datasheet PDF文件第3页浏览型号SI9434BDY-E3的Datasheet PDF文件第4页浏览型号SI9434BDY-E3的Datasheet PDF文件第5页浏览型号SI9434BDY-E3的Datasheet PDF文件第6页 
Si9434BDY  
Vishay Siliconix  
New Product  
P-Channel 20-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.040 @ V = 4.5 V  
6.3  
5.1  
GS  
20  
0.055 @ V = 2.5 V  
GS  
S
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
D
Ordering Information: Si9434BDY—E3 (Lead (Pb)-Free)  
Si9434BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
DS  
V
V
GS  
"8  
T
= 25_C  
= 70_C  
6.3  
5.0  
4.5  
3.6  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
20  
a
Continuous Source Current (Diode Conduction)  
I
2.3  
2.5  
1.2  
1.3  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.6  
0.8  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
45  
80  
20  
50  
95  
24  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Foot (Drain)  
thJF  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
Document Number: 73050  
S-41501—Rev. A, 09-Aug-04  
www.vishay.com  
1

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