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SI9435BDY_05 PDF预览

SI9435BDY_05

更新时间: 2024-11-12 06:11:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 90K
描述
P-Channel 30-V (D-S) MOSFET

SI9435BDY_05 数据手册

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Si9435BDY  
Vishay Siliconix  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.042 @ V = 10 V  
5.7  
5.0  
4.4  
GS  
30  
0.055 @ V = 6  
V
GS  
0.070 @ V = 4.5  
V
GS  
S
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
D
P-Channel MOSFET  
Top View  
Ordering Information: Si9435BDY  
Si9435BDY-T1 (with Tape and Reel)  
Si9435BDY—E3 (Lead (Pb)-Free)  
Si9435BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
V
V
GS  
"20  
T
= 25_C  
= 70_C  
4.1  
3.2  
5.7  
4.6  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
30  
a
continuous Source Current (Diode Conduction)  
I
2.3  
2.5  
1.1  
1.3  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.6  
0.8  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
40  
70  
24  
50  
95  
30  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Foot (Drain)  
thJF  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72245  
S-50153—Rev. C, 31-Jan-05  
www.vishay.com  
1

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