Datasheet > SI9435BDY_05

SI9435BDY_05

更新时间： 2024-11-12 06:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	90K
描述
P-Channel 30-V (D-S) MOSFET

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SI9435BDY_05 数据手册

Si9435BDY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

0.042 @ V = −10 V

−5.7

−5.0

−4.4

−30

0.055 @ V = −6

0.070 @ V = −4.5

SO-8

P-Channel MOSFET

Top View

Ordering Information: Si9435BDY

Si9435BDY-T1 (with Tape and Reel)

Si9435BDY—E3 (Lead (Pb)-Free)

Si9435BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−30

"20

= 25_C

= 70_C

−4.1

−3.2

−5.7

−4.6

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−30

continuous Source Current (Diode Conduction)

−2.3

2.5

−1.1

1.3

= 25_C

= 70_C

Maximum Power Dissipation

1.6

0.8

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72245

S-50153—Rev. C, 31-Jan-05

www.vishay.com

12 3 4 5 6

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