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SI9434BDY-T1-GE3 PDF预览

SI9434BDY-T1-GE3

更新时间: 2024-11-12 15:51:15
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
9页 229K
描述
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

SI9434BDY-T1-GE3 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.69配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):4.5 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SI9434BDY-T1-GE3 数据手册

 浏览型号SI9434BDY-T1-GE3的Datasheet PDF文件第2页浏览型号SI9434BDY-T1-GE3的Datasheet PDF文件第3页浏览型号SI9434BDY-T1-GE3的Datasheet PDF文件第4页浏览型号SI9434BDY-T1-GE3的Datasheet PDF文件第5页浏览型号SI9434BDY-T1-GE3的Datasheet PDF文件第6页浏览型号SI9434BDY-T1-GE3的Datasheet PDF文件第7页 
Si9434BDY  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Definition  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 6.3  
- 5.1  
0.040 at VGS = - 4.5 V  
0.055 at VGS = - 2.5 V  
Compliant to RoHS Directive 2002/95/EC  
- 20  
SO-8  
S
S
S
D
D
1
2
3
4
8
7
6
5
G
S
D
D
G
Top View  
D
Ordering Information:  
Si9434BDY-T1-E3 (Lead (Pb)-free)  
Si9434BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 20  
8
V
VGS  
TA = 25 °C  
TA = 70 °C  
- 6.3  
- 5.0  
- 4.5  
- 3.6  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
- 20  
Continuous Source Current (Diode Conduction)a  
- 2.3  
2.5  
- 1.2  
1.3  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipationa  
PD  
W
1.6  
0.8  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
45  
Maximum  
Unit  
t 10 s  
50  
95  
24  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
80  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
20  
Notes:  
a. Surface Mounted on FR4 board, t 10 s.  
Document Number: 73050  
S09-0704-Rev. B, 27-Apr-09  
www.vishay.com  
1

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