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SI9434DY-E3

更新时间: 2024-11-12 14:44:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 71K
描述
Transistor,

SI9434DY-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.82
配置:Single最大漏极电流 (Abs) (ID):6.4 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
湿度敏感等级:1工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.5 W子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

SI9434DY-E3 数据手册

 浏览型号SI9434DY-E3的Datasheet PDF文件第2页浏览型号SI9434DY-E3的Datasheet PDF文件第3页浏览型号SI9434DY-E3的Datasheet PDF文件第4页浏览型号SI9434DY-E3的Datasheet PDF文件第5页 
Si9434DY  
Siliconix  
P-Channel Enhancement-Mode MOSFET  
PRODUCT SUMMARY  
V
DS  
(V)  
R
(W)  
I (A)  
D
DS(ON)  
0.040 @ V = –4.5 V  
"6.4  
"5.1  
GS  
–20  
0.060 @ V = –2.5 V  
GS  
Recommended upgrade: Si9424DY  
S
S S  
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
D
D D D  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
–20  
"8  
DS  
V
GS  
T
= 25_C  
= 70_C  
"6.4  
"5.1  
"10  
A
A
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
DM  
A
Continuous Source Current (Diode Conduction)  
I
S
–2.5  
T
= 25_C  
= 70_C  
2.5  
A
A
Maximum Power Dissipation  
P
D
W
T
A
1.6  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
A
Maximum Junction-to-Ambient  
R
thJA  
50  
_C/W  
Notes  
A. Surface Mounted on FR4 Board, t v 10 sec.  
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70147.  
A SPICE Model data sheet is available for this product (FaxBack document #70528).  
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054  
S
Phone (408)988-8000  
S
FaxBack (408)970-5600  
S
www.siliconix.com  
S-56981—Rev. H, 15-Jun-98 Siliconix was formerly a division of TEMIC Semiconductors  
1

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