SI9433BDY

更新时间： 2024-09-23 21:54:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	69K
描述
P-Channel 20-V (D-S) MOSFET

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SI9433BDY 数据手册

Si9433BDY

Vishay Siliconix

New Product

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.040 @ V = −4.5 V

−6.2

−5.0

−20

0.060 @ V = −2.7 V

SO-8

Top View

Ordering Information: Si9433BDY—E3 (Lead Free)

Si9433BDY-T1—E3 (Lead Free with Tape and Reel)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−20

"12

= 25_C

= 70_C

−6.2

−5.0

−4.5

−3.5

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−20

Continuous Source Current (Diode Conduction)

−2.3

2.5

−1.2

1.3

= 25_C

= 70_C

Maximum Power Dissipation

1.6

0.8

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on FR4 Board, t v 10 sec.

Document Number: 72755

S-40242—Rev. A, 16-Feb-04

www.vishay.com

12 3 4 5

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SI9433BDY-T1-E3	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SI9433BDY-T1-GE3	VISHAY	获取价格	MOSFET P-CH 20V 4.5A 8-SOIC
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SI9434BDY	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET