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SI9430DYL86Z PDF预览

SI9430DYL86Z

更新时间: 2024-11-12 15:51:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
3页 256K
描述
Small Signal Field-Effect Transistor, 5.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

SI9430DYL86Z 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.74配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):5.8 A
最大漏源导通电阻:0.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI9430DYL86Z 数据手册

 浏览型号SI9430DYL86Z的Datasheet PDF文件第2页浏览型号SI9430DYL86Z的Datasheet PDF文件第3页 
June 1999  
Si9430DY*  
Single P-Channel Enhancement Mode MOSFET  
General Description  
Features  
This P-Channel Enhancement Mode MOSFET is produced  
using Fairchild Semiconductor's advance process that  
has been especially tailored to minimize on-state  
resistance and yet maintain superior switching  
performance.  
• -5.8 A, -20 V. RDS(on) = 0.050 Ω @ VGS = -10 V  
RDS(on) = 0.090 Ω @ VGS = -4.5 V.  
• Low gate charge.  
• Fast switching speed.  
This device is well suited for low voltage and battery  
powered applications where low in-line power loss  
and fast switching are required.  
• High power and current handling capability.  
Applications  
• Battery switch  
• Load switch  
• Motor controls  
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Si9430DY Rev. A  
1999 Fairchild Semiconductor Corporation  

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