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SI9426DY PDF预览

SI9426DY

更新时间: 2024-11-14 22:33:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
3页 51K
描述
Single N-Channel, 2.5V Specified MOSFET

SI9426DY 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOT包装说明:SO-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.34
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):10.5 A
最大漏极电流 (ID):10.5 A最大漏源导通电阻:0.0135 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI9426DY 数据手册

 浏览型号SI9426DY的Datasheet PDF文件第2页浏览型号SI9426DY的Datasheet PDF文件第3页 
January 2001  
SI9426DY  
Single N-Channel, 2.5V Specified MOSFET  
General Description  
Features  
This N-Channel 2.5V specified MOSFET is produced  
using Fairchild Semiconductor’s high cell density  
DMOS technology process that has been especially  
tailored to minimize on-state resistance and yet  
maintain low gate charge for superior switching  
performance.  
10.5 A, 20 V.  
RDS(ON) = 13.5 m@ VGS = 4.5 V  
RDS(ON) = 16 m@ VGS = 2.7 V  
High cell density for extremely low RDS(ON)  
High power and current handling capability in a widely  
used surface mount package  
These devices have been designed to offer exceptional  
power dissipation in a very small footprint package.  
Applications  
DC/DC converter  
Load switch  
D
D
5
6
7
8
4
3
2
1
D
D
G
S
S
SO-8  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
20  
VGSS  
ID  
Gate-Source Voltage  
V
A
±8  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
10.5  
30  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
2.5  
W
1.2  
1
(Note 1c)  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
50  
25  
RθJA  
°C/W  
°C/W  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
9426  
SI9426DY  
13’’  
12mm  
2500 units  
SI9426DY Rev A (W)  
2001 Fairchild Semiconductor International  

SI9426DY 替代型号

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