SI7806BDN

更新时间： 2024-11-09 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		开关
页数	文件大小	规格书
6页	108K
描述
N-Channel 30-V (D-S) Fast Switching MOSFET

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中文翻译

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SI7806BDN 数据手册

Si7806BDN

Vishay Siliconix

New Product

N-Channel 30-V (D-S) Fast Switching MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFETS

PWM Optimized

V_DS(V)

r_DS(on)(Ω)

I_D(A)

12.6

10.6

0.0145 at V_GS= 10 V

0.0205 at V_GS= 4.5 V

New Low Thermal Resistance PowerPAK^®

Package with Low 1.07 mm Profile

RoHS

COMPLIANT

APPLICATIONS

•

DC/DC Converters

- Secondary Synchronous Rectifier

- High-Side MOSFET in Synchronous Buck

PowerPAK 1212-8

3.30 mm

Bottom View

Ordering Information: Si7806BDN-T1-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C unless otherwise noted

Symbol

10 secs

Steady State

Unit

Parameter

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

T_A= 25 °C

T_A= 70 °C

12.6

10.1

8.0

6.4

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

3.2

3.8

2.0

1.3

1.5

0.8

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 70 °C

T_J, T_stg

- 55 to 150

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 sec

Steady State

Maximum Junction-to-Ambient^a

°C/W

R_thJC

1.9

2.4

Maximum Junction-to-Case (Drain)

Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

Document Number: 73081

S-60790-Rev. B, 08-May-06

www.vishay.com

12 3 4 5 6

中文翻译

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