Datasheet > SI7674DP-T1-GE3

SI7674DP-T1-GE3

更新时间： 2024-11-05 15:51:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	110K
描述
Power Field-Effect Transistor,

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SI7674DP-T1-GE3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SI7674DP-T1-GE3 数据手册

Si7674DP

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

0.0033 at V_GS= 10 V

0.0046 at V_GS= 4.5 V

•

Extremely Low Q_gdfor Switching Losses

100 % R_gTested

37 nC

100 % Capacitance Tested

PowerPAK SO-8

100 % Avalanche Tested

Compliant to RoHS Directive 2002/95/EC

6.15 mm

5.15 mm

APPLICATIONS

Core DC/DC in Notebooks

•

Bottom View

Ordering Information: Si7674DP-T1-E3 (Lead (Pb)-free)

Si7674DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

31^{b, c}

25^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

4.9^{b, c}

Continuous Source-Drain Diode Current

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

5.4^{b, c}

3.4^{b, c}

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 s

Steady State

°C/W

R_thJC

1.0

1.5

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 65 °C/W.

Document Number: 73562

S110212-Rev. C, 14-Feb-11

www.vishay.com

12 3 4 5 6 7

中文翻译

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SI7674DP-T1-GE3 替代型号

型号	品牌	替代类型	描述	数据表
SIR466DP-T1-GE3	VISHAY	类似代替	Trans MOSFET N-CH 30V 28A 8-Pin PowerPAK SO T/R

与SI7674DP-T1-GE3相关器件

型号	品牌	获取价格	描述	数据表
SI7678DP-T1-E3	VISHAY	获取价格	TRANSISTOR 14.5 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPA
SI7682DP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7682DP-T1-E3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7682DP-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 30V 17.5A 8-Pin PowerPAK SO T/R
SI7684DP-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
SI7686DP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7686DP-T1-E3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7686DP-T1-GE3	VISHAY	获取价格	N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel
SI7703EDN	VISHAY	获取价格	Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
SI7703EDN_08	VISHAY	获取价格	Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

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