SI7703EDN

更新时间： 2024-11-24 22:30:43

品牌	Logo	应用领域
威世 - VISHAY		晶体肖特基二极管晶体管
页数	文件大小	规格书
6页	54K
描述
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

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中文翻译

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技术参数
数据手册

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SI7703EDN 技术参数

是否无铅：	含铅	生命周期：	Transferred
包装说明：	,	针数：	8
Reach Compliance Code：	unknown	风险等级：	5.06
Is Samacsys：	N	Base Number Matches：	1

SI7703EDN 数据手册

Si7703EDN

Vishay Siliconix

New Product

Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

FEATURES

MOSFET PRODUCT SUMMARY

D TrenchFETr Power MOSFETS: 1.8-V Rated

D ESD Protected: 4500 V

V_DS(V)

r_DS(on)(W)

I_D(A)

D Ultra-Low Thermal Resistance, PowerPAKt

0.048 @ V = –4.5 V

–6.3

–5.3

–4.6

Package with Low 1.07-mm Profile

0.068 @ V = –2.5 V

–20

APPLICATIONS

0.090 @ V = –1.8 V

D Charger Switching

SCHOTTKY PRODUCT SUMMARY

V_f(V)

V_KA(V)

I_F(A)

Diode Forward Voltage

0.48 V @ 0.5 A

1.0

PowerPAKt 1212-8

3.30 mm

3 kW

P-Channel MOSFET

Bottom View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 sec

Steady State

Unit

Drain-Source Voltage (MOSFET and Schottky)

Reverse Voltage (Schottky)

–20

Gate-Source Voltage (MOSFET)

"12

= 25_C

= 85_C

–4.3

–3.1

–6.3

–4.5

Continuous Drain Current (T = 150_C) (MOSFET)

Pulsed Drain Current (MOSFET)

–20

Continuous Source Current (MOSFET Diode Conduction)

Average Foward Current (Schottky)

–2.3

–1.1

1.0

Pulsed Foward Current (Schottky)

= 25_C

= 85_C

= 25_C

= 85_C

2.8

1.5

2.0

1.0

1.3

0.7

1.1

0.6

Maximum Power Dissipation (MOSFET)

Maximum Power Dissipation (Schottky)

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

Notes

a. Surface Mounted on 1” x1” FR4 Board.

Document Number: 71429

S-03709—Rev. A, 14-May-01

www.vishay.com

12 3 4 5 6

中文翻译

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与SI7703EDN相关器件

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SI7703EDN_08	VISHAY	获取价格	Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
SI7703EDN-E3	VISHAY	获取价格	TRANSISTOR 4.3 A, 20 V, 0.048 ohm, P-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET G
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