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SI7774DP-T1-GE3 PDF预览

SI7774DP-T1-GE3

更新时间: 2024-11-25 09:25:47
品牌 Logo 应用领域
威世 - VISHAY 晶体肖特基二极管晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
13页 508K
描述
N-Channel 30 V (D-S) MOSFET with Schottky Diode

SI7774DP-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-XDSO-C5
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N雪崩能效等级(Eas):80 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):60 A
最大漏极电流 (ID):60 A最大漏源导通电阻:0.0038 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XDSO-C5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):48 W
最大脉冲漏极电流 (IDM):80 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI7774DP-T1-GE3 数据手册

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New Product  
Si7774DP  
Vishay Siliconix  
N-Channel 30 V (D-S) MOSFET with Schottky Diode  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Definition  
VDS (V)  
RDS(on) ()  
Qg (Typ.)  
I
D (A)a  
60  
SkyFET® Monolithic TrenchFET®  
Power MOSFET and Schottky Diode  
100 % Rg Tested  
0.0038 at VGS = 10 V  
0.0047 at VGS = 4.5 V  
30  
21.5 nC  
60  
100 % UIS Tested  
PowerPAK® SO-8  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
S
6.15 mm  
VRM, POL, Server  
5.15 mm  
1
S
D
Notebook  
- Low-Side  
2
S
3
G
4
D
8
D
7
D
Schottky Diode  
6
D
5
G
N-Channel MOSFET  
Bottom View  
Ordering Information: Si7774DP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
S
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
30  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
60a  
T
C = 25 °C  
60a  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
27b, c  
21b, c  
80  
60a  
8b, c  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
TA = 25 °C  
Continuous Source-Drain Diode Current  
IAS  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
40  
L =0.1 mH  
EAS  
mJ  
W
80  
T
C = 25 °C  
48  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
31  
Maximum Power Dissipation  
PD  
5.0b, c  
3.2b, c  
- 55 to 150  
260  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
20  
Maximum  
Unit  
Maximum Junction-to-Ambientb, f  
t 10 s  
25  
°C/W  
Maximum Junction-to-Case (Drain)  
Steady State  
RthJC  
2.1  
2.6  
Notes:  
a. Package limited.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 70 °C/W.  
Document Number: 70630  
S10-1534-Rev. A, 19-Jul-10  
www.vishay.com  
1

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