是否无铅: | 不含铅 | 生命周期: | Obsolete |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-XDSO-C5 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 80 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 60 A |
最大漏极电流 (ID): | 60 A | 最大漏源导通电阻: | 0.0038 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XDSO-C5 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 5 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 48 W |
最大脉冲漏极电流 (IDM): | 80 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | C BEND |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI7780DP-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 60 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM | |
SI7784DP-T1-GE3 | VISHAY |
获取价格 |
Trans MOSFET N-CH 30V 21.5A 8-Pin PowerPAK SO T/R | |
SI7788DP-T1-GE3 | VISHAY |
获取价格 |
Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO T/R | |
SI7792DP | VISHAY |
获取价格 |
N-Channel 30 V (D-S) MOSFET with Schottky Diode | |
SI7792DP-T1-GE3 | VISHAY |
获取价格 |
N-Channel 30 V (D-S) MOSFET with Schottky Diode | |
SI7794DP | VISHAY |
获取价格 |
N-Channel 30 V (D-S) MOSFET with Schottky Diode | |
SI7794DP-T1-GE3 | VISHAY |
获取价格 |
N-Channel 30 V (D-S) MOSFET with Schottky Diode | |
SI7802DN | VISHAY |
获取价格 |
N-Channel 250-V (D-S) MOSFET | |
SI7802DN_06 | VISHAY |
获取价格 |
N-Channel 250-V (D-S) MOSFET | |
SI7804DN | VISHAY |
获取价格 |
N-Channel 30-V (D-S) Fast Switching MOSFET |