Datasheet > SI7748DP

SI7748DP

更新时间： 2024-09-16 09:25:47

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
13页	482K
描述
N-Channel 30-V (D-S) MOSFET with Schottky Diode

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SI7748DP 数据手册

New Product

Si7748DP

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

PRODUCT SUMMARY

•

Halogen-free

SkyFET™ Monolithic TrenchFET^®

Power MOSFET and Schottky Diode

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

•

RoHS

0.0048 at V_GS= 10 V

0.0066 at V_GS= 4.5 V

COMPLIANT

27.8 nC

•

100 % R_gTested

100 % UIS Tested

PowerPAK^®SO-8

APPLICATIONS

•

Notebook

- Vcore Low-Side

6.15 mm

5.15 mm

Schottky Diode

N-Channel MOSFET

Bottom View

Ordering Information: Si7748DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

50^a

23.5^{b, c}

18.6^{b, c}

50^a

4.3^{b, c}

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

E_AS

T_C= 70 °C

P_D

Maximum Power Dissipation

4.8^{b, c}

3^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 s

°C/W

Steady State

R_thJC

1.7

2.2

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 68 °C/W.

Document Number: 68785

S-81714-Rev. A, 04-Aug-08

www.vishay.com

12 3 4 5 6 7...13

中文翻译

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与SI7748DP相关器件

型号	品牌	获取价格	描述	数据表
SI7748DP-T1-GE3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI7758DP-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 30V 34.6A 8-Pin PowerPAK SO T/R
SI7768DP-T1-GE3	VISHAY	获取价格	TRANSISTOR 30 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMP
SI7772DP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI7772DP-T1-GE3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI7774DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET with Schottky Diode
SI7774DP-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET with Schottky Diode
SI7780DP-T1-GE3	VISHAY	获取价格	TRANSISTOR 60 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM
SI7784DP-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 30V 21.5A 8-Pin PowerPAK SO T/R
SI7788DP-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO T/R

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