Datasheet > SI7774DP

SI7774DP

更新时间： 2024-11-05 09:25:47

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
13页	508K
描述
N-Channel 30 V (D-S) MOSFET with Schottky Diode

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Si7774DP

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)()

Q_g(Typ.)

_D(A)^a

SkyFET^®Monolithic TrenchFET^®

Power MOSFET and Schottky Diode

100 % R_gTested

0.0038 at V_GS= 10 V

0.0047 at V_GS= 4.5 V

•

21.5 nC

•

100 % UIS Tested

PowerPAK^®SO-8

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

6.15 mm

•

VRM, POL, Server

5.15 mm

•

Notebook

- Low-Side

Schottky Diode

N-Channel MOSFET

Bottom View

Ordering Information: Si7774DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

60^a

_C= 25 °C

60^a

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

27^{b, c}

21^{b, c}

60^a

8^{b, c}

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L =0.1 mH

E_AS

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation

P_D

5.0^{b, c}

3.2^{b, c}

- 55 to 150

260

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, f}

t  10 s

°C/W

Maximum Junction-to-Case (Drain)

Steady State

R_thJC

2.1

2.6

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

Document Number: 70630

S10-1534-Rev. A, 19-Jul-10

www.vishay.com

12 3 4 5 6 7...13

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与SI7774DP相关器件

型号	品牌	获取价格	描述	数据表
SI7774DP-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET with Schottky Diode
SI7780DP-T1-GE3	VISHAY	获取价格	TRANSISTOR 60 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM
SI7784DP-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 30V 21.5A 8-Pin PowerPAK SO T/R
SI7788DP-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO T/R
SI7792DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET with Schottky Diode
SI7792DP-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET with Schottky Diode
SI7794DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET with Schottky Diode
SI7794DP-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET with Schottky Diode
SI7802DN	VISHAY	获取价格	N-Channel 250-V (D-S) MOSFET
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