型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI5856DC_08 | VISHAY |
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N-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
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SI5856DC-T1 | VISHAY |
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N-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
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SI5856DC-T1-E3 | VISHAY |
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N-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
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SI5857DU | VISHAY |
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P-Channel 20-V (D-S) MOSFET With Schottky Diode |
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SI5857DU-T1-E3 | VISHAY |
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Transistor |
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SI5857DU-T1-GE3 | VISHAY |
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P-Channel 20-V (D-S) MOSFET With Schottky Diode |
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SI5858DU | VISHAY |
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N-Channel 20-V (D-S) MOSFET with Schottky Diode |
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SI5858DU-T1-E3 | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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SI5858DU-T1-GE3 | VISHAY |
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N-Channel 20-V (D-S) MOSFET with Schottky Diode |
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SI-58M | ETC |
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Supports 2x DDR3 1333MHz SO-DIMM, Max. 16GB |
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