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SI4436DY PDF预览

SI4436DY

更新时间: 2024-11-19 09:26:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 271K
描述
N-Channel 60-V (D-S) MOSFET

SI4436DY 数据手册

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New Product  
Si4436DY  
Vishay Siliconix  
N-Channel 60-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)d  
Definition  
TrenchFET® Power MOSFET  
Optimized for “Low Side” Synchronous  
Rectifier Operation  
0.036 at VGS = 10 V  
0.043 at VGS = 4.5 V  
8
8
60  
10.5 nC  
100 % Rg and UIS Tested  
APPLICATIONS  
CCFL Inverter  
SO-8  
D
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
G
Top View  
S
Ordering Information: Si4436DY-T1-E3 (Lead (Pb)-free)  
Si4436DY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
VDS  
Limit  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
8a  
T
C = 25 °C  
TC = 70 °C  
A = 25 °C  
TA = 70 °C  
6.8  
Continuous Drain Current (TJ = 150 °C)  
ID  
6.1b, c  
4.8b, c  
25  
T
A
IDM  
IS  
Pulsed Drain Current  
T
C = 25 °C  
A = 25 °C  
4.2  
2.1b, c  
Continuous Source-Drain Diode Current  
T
IAS  
Avalanche Current  
15  
L = 0.1 mH  
EAS  
Single-Pulse Avalanche Energy  
11.2  
5
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
3.2  
PD  
Maximum Power Dissipation  
2.5b, c  
1.6b, c  
- 55 to 150  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
RthJF  
Typical  
38  
Maximum  
Unit  
Maximum Junction-to-Ambientb, d  
t 10 s  
Steady State  
50  
25  
°C/W  
Maximum Junction-to-Foot (Drain)  
20  
Notes:  
a. Package limited.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. Maximum under Steady State conditions is 85 °C/W.  
Document Number: 73664  
S09-0322-Rev. B, 02-Mar-09  
www.vishay.com  
1

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