Datasheet > SI4436DY

SI4436DY

更新时间： 2024-11-06 09:26:07

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威世 - VISHAY		/
页数	文件大小	规格书
10页	271K
描述
N-Channel 60-V (D-S) MOSFET

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Si4436DY

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^d

Definition

•

TrenchFET^®Power MOSFET

Optimized for “Low Side” Synchronous

Rectifier Operation

0.036 at V_GS= 10 V

0.043 at V_GS= 4.5 V

10.5 nC

• 100 % R_gand UIS Tested

APPLICATIONS

•

CCFL Inverter

SO-8

Top View

Ordering Information: Si4436DY-T1-E3 (Lead (Pb)-free)

Si4436DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

8^a

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

6.8

Continuous Drain Current (T_J= 150 °C)

I_D

6.1^{b, c}

4.8^{b, c}

I_DM

I_S

Pulsed Drain Current

_C= 25 °C

_A= 25 °C

4.2

2.1^{b, c}

Continuous Source-Drain Diode Current

I_AS

Avalanche Current

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

11.2

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

3.2

P_D

Maximum Power Dissipation

2.5^{b, c}

1.6^{b, c}

- 55 to 150

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

t ≤ 10 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 73664

S09-0322-Rev. B, 02-Mar-09

www.vishay.com

12 3 4 5 6 7...10

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