SI4336DY

更新时间： 2024-11-15 21:54:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	61K
描述
N-Channel 30-V (D-S) MOSFET

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中文翻译

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技术参数
数据手册

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SI4336DY 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.87	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	17 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	3.5 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

SI4336DY 数据手册

Si4336DY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

D Ultra Low On-Resistance Using High Density

PRODUCT SUMMARY

TrenchFETr Gen II Power MOSFET Technology

D Q_gOptimized

V_DS(V)

r_DS(on)(W)

I_D(A)

Q_g(Typ)

D 100% R_gTested

APPLICATIONS

0.00325 @ V = 10 V

0.0042 @ V = 4.5 V

D Synchronous Buck Low-Side

− Notebook

− Server

− Workstation

D Synchronous Rectifier, POL

SO-8

Top View

Ordering Information: Si4336DY

Si4336DY-T1 (with Tape and Reel)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 70_C

Continuous Drain Current (T = 150__C)

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

Avalanche Current

2.9

1.3

L = 0.1 mH

= 25_C

= 70_C

3.5

2.2

1.6

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72417

S-41795—Rev. B, 04-Oct-04

www.vishay.com

12 3 4 5

中文翻译

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