Datasheet > SI4346DY

SI4346DY

更新时间： 2024-09-27 22:43:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	90K
描述
N-Channel 30-V (D-S) MOSFET

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中文翻译

获取价格

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SI4346DY 数据手册

Si4346DY

Vishay Siliconix

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

D TrenchFETr Gen II Power MOSFET

PRODUCT SUMMARY

D 100% R_gTested

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

Q_g(Typ)

0.023 @ V = 10 V

D High-Side DC/DC Conversion

0.025 @ V = 4.5 V

7.5

6.8

6.0

6.5

− Notebook

0.030 @ V = 3.0 V

− Desktop

− Server

0.036 @ V = 2.5 V

D Notebook Logic DC/DC, Low-Side

SO-8

Top View

Ordering Information: Si4346DY—E3

Si4346DY-T1—E3 ( with Tape and Reel)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

= 25_C

= 70_C

5.9

4.7

Continuous Drain Current (T = 150_C)

6.5

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

2.2

2.5

1.6

1.20

1.31

0.84

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72958

S-41793—Rev. B, 04-Oct-04

www.vishay.com

12 3 4 5 6

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