Datasheet > SI4340DDY

SI4340DDY

更新时间： 2024-09-28 09:26:07

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
15页	230K
描述
Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode

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Si4340DDY

Vishay Siliconix

Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)()

Q_g(Typ.)

_D(A)^a

14.8

12.8

0.0085 at V_GS= 10 V

0.0115 at V_GS= 4.5 V

0.0070 at V_GS= 10 V

0.0095 at V_GS= 4.5 V

•

TrenchFET^®Power MOSFET

100 % R_gTested

Channel-1

Channel-2

8.1

8.4

100 % UIS Tested

18.9

Compliant to RoHS Directive 2002/95/EC

SCHOTTKY PRODUCT SUMMARY

APPLICATIONS

V_DS(V)

V_SD(V) Diode Forward Voltage

I_F(A)

•

DC/DC Converters, Synchronous Buck Converters

0.55 V at 2.5 A

- Game Stations

- Notebook PC Logic

SO-14

Schottky Diode

Top View

N-Channel 1

MOSFET

N-Channel 2

MOSFET

Ordering Information: Si4340DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Channel-1

Channel-2

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

14.8

11.8

12.1^{b, c}

9.7^{b, c}

17.6

Continuous Drain Current (T_J= 150 °C)

I_D

16.3^{b, c}

13^{b, c}

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

Source-Drain Current Diode Current

T_C= 25 °C

2.5

1.7^{b, c}

4.5

2.5^{b, c}

T_A= 25 °C

I_AS

11.25

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

_C= 25 °C

_C= 70 °C

5.4

3.5

3^{b, c}

1.9^{b, c}

1.9

P_D

Maximum Power Dissipation

2^{b, c}

1.3^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Channel-1

Typ. Max.

Channel-2

Typ. Max.

35 42

18 23

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

Unit

t  10 s

62.5

°C/W

Steady State

R_thJF

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions for channel 1 is 110 °C/W and channel 2 is 87 °C/W.

Document Number: 67583

S11-0860-Rev. A, 02-Mar-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SI4340DDY相关器件

型号	品牌	获取价格	描述	数据表
SI4340DDY-T1-GE3	VISHAY	获取价格	Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode
SI4340DY	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
SI4340DY-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI4340DY-T1	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
SI4340DY-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor,
SI4346DY	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI4346DY-E3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI4346DYT1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 5.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
SI4346DY-T1-E3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI4348DY	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET

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