Datasheet > SI3410DV

SI3410DV

更新时间： 2024-11-05 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	143K
描述
N-Channel 30-V (D-S) MOSFET

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SI3410DV 数据手册

New Product

Si3410DV

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

FEATURES

•

_D(A)^a

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

TrenchFET^®Power MOSFET

0.0195 at V_GS= 10 V

0.023 at V_GS= 4.5 V

9.2 nC

APPLICATIONS

RoHS

COMPLIANT

•

Notebook Load Switch

•

Low Current DC/DC

TSOP-6

Top View

(1, 2, 5, 6)

3 mm

Marking Code

AM XXX

Lot Traceability

and Date Code

(3)

Part # Code

2.85 mm

(4)

Ordering Information: Si3410DV-T1-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

_C= 70 °C

8^a

7.5^b,c

5.9^b,c

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

2.7

1.7^b,c

_C= 25 °C

_A= 25 °C

Continuous Source-Drain Diode Current

T_C= 25 °C

4.1

_C= 70 °C

_A= 25 °C

2.6

2^b,c

P_D

Maximum Power Dissipation

1.25^b,c

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

t ≤ 5 s

Steady State

62.5

°C/W

Notes:

a. Package Limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 110 °C/W.

Document Number: 69254

S-72070-Rev. A, 08-Oct-07

www.vishay.com

12 3 4 5 6 7

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