Datasheet > SI2303BDS

SI2303BDS

更新时间： 2024-11-20 03:32:07

品牌	Logo	应用领域
胜美达 - SUMIDA		/
页数	文件大小	规格书
6页	116K
描述
P-Channel 30-V (D-S) MOSFET

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SI2303BDS 数据手册

Si2303BDS

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

_D(A)^b

V_DS(V)

R_DS(on)(Ω)

Pb-free

0.200 at V_GS= - 10 V

0.380 at V_GS= - 4.5 V

Available

- 1.64

- 1.0

- 30

RoHS*

COMPLIANT

TO-236

(SOT-23)

Top View

Si2303BDS (L3)*

* Marking Code

Ordering Information: Si2303BDS-T1

Si2303BDS-T1-E3 (Lead (Pb)-free)

Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 30

V_GS

T_A= 25 °C

T_A= 70 °C

- 1.64

- 1.31

- 1.49

- 1.2

Continuous Drain Current (T_J= 150 °C)^b

I_D

Pulsed Drain Current^a

Continuous Source Current (Diode Conduction)^b

I_DM

I_S

- 10

- 0.75

0.9

- 0.6

0.7

T_A= 25 °C

T_A= 70 °C

Power Dissipation^b

P_D

0.57

0.45

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

120

Maximum

145

Unit

Maximum Junction-to-Ambient^b

Maximum Junction-to-Ambient^c

R_thJA

°C/W

140

175

Notes:

a. Pulse width limited by maximum junction temperature.

b. Surface Mounted on FR4 board, t ≤ 5 s.

c. Surface Mounted on FR4 board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72065

S-80642-Rev. C, 24-Mar-08

www.vishay.com

12 3 4 5 6

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