Datasheet > SI1033X-E3

SI1033X-E3

更新时间： 2024-11-18 21:06:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	65K
描述
Transistor

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技术参数
数据手册

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SI1033X-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大漏极电流 (Abs) (ID)：	0.145 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e3
湿度敏感等级：	1	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	0.28 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

SI1033X-E3 数据手册

Si1033X

Vishay Siliconix

New Product

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

1.5ĆV Rated

V_DS(V)

r_DS(on)(W)

I_D(mA)

8 @ V = –4.5 V

–150

–125

–100

–30

12 @ V = –2.5

–20

15 @ V = –1.8 V

20 @ V = –1.5 V

FEATURES

BENEFITS

APPLICATIONS

D High-Side Switching

D Ease in Driving Switches

D Low Offset (Error) Voltage

D Low-Voltage Operation

D Drivers: Relays, Solenoids, Lamps,

Hammers, Displays, Memories

D Low On-Resistance: 8 W

D Low Threshold: 0.9 V (typ)

D Battery Operated Systems

D Power Supply Converter Circuits

D Load/Power Switching Cell Phones, Pagers

D Fast Switching Speed: 45 ns (typ) D High-Speed Circuits

D 1.5-V Operation

D Low Battery Voltage Operation

D Gate-Source ESD Protection

SC-89

Marking Code: K

Top View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

–20

= 25_C

= 85_C

–155

–110

–145

–105

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

–650

Continuous Source Current (diode conduction)

–450

280

–380

250

= 25_C

= 85_C

Maximum Power Dissipation

145

130

Operating Junction and Storage Temperature Range

Gate-Source ESD Rating (HBM, Method 3015)

T , T

–55 to 150

2000

stg

ESD

Notes

a. Surface Mounted on FR4 Board.

b. Pulse width limited by maximum junction temperature.

Document Number: 71428

S-03201—Rev. A, 12-Mar-01

www.vishay.com

12 3 4 5

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