Datasheet > SFF6N100S1TXV

SFF6N100S1TXV

更新时间： 2024-11-13 06:45:03

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	122K
描述
Power Field-Effect Transistor

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中文翻译

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数据手册

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SFF6N100S1TXV 数据手册

SFF6N100S1

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

4.5 AMP

Avalanche Rated N-channel MOSFET

1000 Volts, 2 Ω

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

SFF6N100 ___ ___

Features:

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└



Rugged construction with poly-Si gate

Low RDS(on) and high transconductance

Excellent high temperature stability

Very fast switching speed

Fast recovery and superior dv/dt performance

Increased reverse energy capability

Low input and transfer capacitance for easy

paralleling

Package ^3/

S1 = SMD1



Hermetically sealed surface mount power

package



TX, TXV, S-Level screening available

Replacement for IRF340 Types

Maximum Ratings

Symbol

V_DS

Value

1000

±20

Units

Drain - Source Voltage

Gate – Source Voltage

V_GS

@ T_C= 25°C

@ T_C= 100°C

4.5

2.8

Continuous Drain Current

I_D

°C

Operating & Storage Temperature

-55 to +150

1.25

T_OP& T_STG

R_θJC

Thermal Resistance, Junction to Case

°C /W

@ T_C= 25°C

@ T_C= 55°C

100

Total Power Dissipation

P_D

Single Pulse Avalanche Energy

E_AS

700

NOTES:

SMD1

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25°C.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00301D

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