生命周期: | Active | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.67 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (Abs) (ID): | 70 A | 最大漏极电流 (ID): | 70 A |
最大漏源导通电阻: | 0.01 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 107 W |
最大脉冲漏极电流 (IDM): | 140 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SFF70N10C | SSDI |
获取价格 |
70 AMP 600 VOLT 0.030 ohm N-Channel Power MOSFET | |
SFF70N10M | SSDI |
获取价格 |
70 AMP 600 VOLT 0.030 ohm N-Channel Power MOSFET | |
SFF70N10Z | SSDI |
获取价格 |
70 AMP 600 VOLT 0.030 ohm N-Channel Power MOSFET | |
SFF70N70NDB | SSDI |
获取价格 |
Power Field-Effect Transistor | |
SFF70N70NUB | SSDI |
获取价格 |
Power Field-Effect Transistor | |
SFF70N70PDB | SSDI |
获取价格 |
Power Field-Effect Transistor | |
SFF70N70S2 | SSDI |
获取价格 |
Power Field-Effect Transistor | |
SFF70N70S2DB | SSDI |
获取价格 |
Power Field-Effect Transistor | |
SFF70N70S2UBTXV | SSDI |
获取价格 |
Power Field-Effect Transistor | |
SFF730 | WINSEMI |
获取价格 |
Silicon N-Channel MOSFET |