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SFF70N70NUB PDF预览

SFF70N70NUB

更新时间: 2024-09-26 20:00:55
品牌 Logo 应用领域
SSDI 局域网开关脉冲晶体管
页数 文件大小 规格书
3页 160K
描述
Power Field-Effect Transistor

SFF70N70NUB 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-XSFM-P3
Reach Compliance Code:compliant风险等级:5.63
雪崩能效等级(Eas):2000 mJ外壳连接:ISOLATED
配置:Single最小漏源击穿电压:700 V
最大漏极电流 (Abs) (ID):55 A最大漏极电流 (ID):55 A
最大漏源导通电阻:0.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-258AAJESD-30 代码:R-XSFM-P3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):500 W
最大脉冲漏极电流 (IDM):220 A表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):340 ns最大开启时间(吨):140 ns
Base Number Matches:1

SFF70N70NUB 数据手册

 浏览型号SFF70N70NUB的Datasheet PDF文件第2页浏览型号SFF70N70NUB的Datasheet PDF文件第3页 
SFF70N70 Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
70 AMP , 700 Volts, 50 m  
Avalanche Rated N-channel  
MOSFET  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
SFF70N70 ___ ___ ___  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
Rugged poly-Si gate  
Lead Option 3/  
__ = Straight Leads  
DB = Down Bend  
UB = Up Bend  
Lowest ON-resistance in the industry  
Avalanche rated  
Hermetically Sealed, Isolated Package  
Low Total Gate Charge  
Fast Switching  
TX, TXV, S-Level screening available  
Package 3/ 4/  
N = TO-258  
P = TO-259  
S2 = SMD2  
Improved (RDS(ON) QG) figure of merit  
Maximum Ratings5/  
Symbol  
VDSS  
Value  
Units  
V
Drain - Source Voltage  
700  
±20  
±30  
continuous  
transient  
Gate – Source Voltage  
VGS  
ID1  
V
A
Max. Continuous Drain Current (package  
limited)  
60  
@ TC = 25°C  
@ TC = 25°C  
@ TC = 100°C  
ID2  
ID3  
70  
40  
Max. Instantaneous Drain Current (Tj limited)  
Single and Repetitive Avalanche Energy  
A
EAS  
EAR  
2000  
3
@ L= 0.1 mH  
@ TC = 25°C  
mJ  
Total Power Dissipation  
250  
W
PD  
Operating & Storage Temperature  
-55 to +150  
°C  
TOP & TSTG  
Maximum Thermal Resistance  
(Junction to Case)  
N, P  
S2  
0.5  
0.25  
RθJC  
°C/W  
NOTES:  
SMD2 (S2)  
TO-258 (N)  
TO-259 (P)  
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.  
1/ For ordering information, price, and availability - contact  
factory.  
2/ Screening based on MIL-PRF-19500. Screening flows  
available on request.  
3/ For lead bending options / pinout configurations - contact  
factory.  
4/ Maximum current limited by package configuration  
5/ Unless otherwise specified, all electrical characteristics  
@25oC.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: FT0061A  
DOC  

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