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SFF740 PDF预览

SFF740

更新时间: 2024-02-09 07:48:55
品牌 Logo 应用领域
稳先微 - WINSEMI /
页数 文件大小 规格书
7页 527K
描述
Silicon N-Channel MOSFET

SFF740 数据手册

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SFF740  
Silicon N-Channel MOSFET  
Features  
10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V  
Ultra-low Gate Charge(Typical 60nC)  
Fast Switching Capability  
100%Avalanche Tested  
Maximum Junction Temperature Range(150℃)  
General Description  
This Power MOSFET is produced using Winsemi's advancedplanar  
stripe,VDMOS technology. This latest technology has beenespecially  
designed to minimize on -state resistance,have a highrugged  
avalanchecharacteristics. This devices is speciallywellsuitedfor high  
efficiency switch model power supplies, power factor correction and  
half bridge and full bridge resonant topology line a electronic lamp  
ballast.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Value  
400  
10*  
Units  
V
VDSS  
Drain Source Voltage  
Continuous Drain Current(@Tc=25)  
Continuous Drain Current(@Tc=100)  
Drain Current Pulsed  
A
ID  
6.3*  
40*  
A
IDM  
VGS  
EAS  
(Note1)  
A
Gate to Source Voltage  
±30  
450  
13  
V
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
(Note2)  
(Note1)  
(Note3)  
mJ  
mJ  
V/ ns  
W
EAR  
dv/dt  
Peak Diode Recovery dv /dt  
4
Total Power Dissipation(@Tc=25)  
Derating Factor above 25℃  
44  
PD  
0.35  
-55~150  
300  
W/℃  
TJ,Tstg  
TL  
Junction and Storage Temperature  
Maximum lead Temperature for soldering purposes  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Value  
Symbol  
Parameter  
Units  
Min  
Typ  
Max  
2.86  
62.5  
RQJC  
RQJA  
Thermal Resistance , Junction -to -Case  
Thermal Resistance , Junction-to -Ambient  
-
-
/W  
/W  
-
-
Rev.A Jun.2011  
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.  

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