5秒后页面跳转
SFF75N08Z PDF预览

SFF75N08Z

更新时间: 2024-01-09 12:01:58
品牌 Logo 应用领域
SSDI 晶体晶体管功率场效应晶体管开关局域网
页数 文件大小 规格书
2页 43K
描述
55 AMP (note 1) /75 Volts 8.5 mO N-Channel Trench Gate MOSFET

SFF75N08Z 技术参数

生命周期:Active零件包装代码:TO-254AA
包装说明:FLANGE MOUNT, S-XSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.72Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (ID):55 A
最大漏源导通电阻:0.0085 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-254AAJESD-30 代码:S-XSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SFF75N08Z 数据手册

 浏览型号SFF75N08Z的Datasheet PDF文件第2页 
SFF75N08M  
SFF75N08Z  
Solid State Devices, Inc.  
14830 Valley View Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
55 AMP (note 1) /75 Volts  
8.5 mO  
TO-254 and TO-254Z  
N-Channel Trench Gate MOSFET  
Note 1: maximum current limited by package  
configuration  
Features:  
·
·
·
·
·
·
·
·
·
Trench gate technology for high cell density  
Lowest ON-resistance in the industry  
Enhanced operating temperature range  
Hermetically Sealed, Isolated Package  
Low Total Gate Charge  
Fast Switching  
Enhanced replacement for IRF7MS2907  
TX, TXV, S-Level screening available  
Improved (RDS(ON) QG) figure of merit  
Maximum Ratings  
Drain - Source Voltage  
Gate – Source Voltage  
Symbol  
VDSS  
Value  
75  
Units  
V
V
±20  
VGS  
@ TC = 25ºC  
@ TC = 125ºC  
55 (note 1)  
55 (note 1)  
ID1  
ID2  
Max. Continuous Drain Current (package limited)  
Max. Instantaneous Drain Current (Tj limited)  
A
A
@ TC = 25ºC  
@ TC = 125ºC  
175  
75  
ID3  
ID4  
75  
280  
Max. Avalanche current  
@ L= 0.1 mH  
@ L= 0.1 mH  
@ TC = 25ºC  
IAR  
EAR  
A
mJ  
W
ºC  
Repetitive Avalanche Energy  
Total Power Dissipation  
210  
PD  
-55 to +175  
Operating & Storage Temperature  
TOP & TSTG  
0.7  
(typ 0.55)  
Maximum Thermal Resistance  
(Junction to Case)  
ºC/W  
R0JC  
TO-254 (M)  
TO-254Z (Z)  
PIN 3  
PIN 2  
PIN 3  
PIN 2  
PIN 1  
PIN 1  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: FT0021A  
DOC  

与SFF75N08Z相关器件

型号 品牌 获取价格 描述 数据表
SFF75N10/3 SSDI

获取价格

75 AMP 100 VOLTS 0.025 OHM N-Channel POWER MOSFET
SFF75N10-3 SSDI

获取价格

75 AMP 100 VOLTS 0.025 OHM N-Channel POWER MOSFET
SFF75N10B SSDI

获取价格

75 AMP 100 VOLTS 0.025 OHM N-Channel POWER MOSFET
SFF75N10B_1 SSDI

获取价格

Avalanche Rated N-channel MOSFET
SFF75N10M SSDI

获取价格

75 AMP 100 VOLTS 0.025 OHM N-Channel POWER MOSFET
SFF75N10MD SSDI

获取价格

Power Field-Effect Transistor, 75A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Met
SFF75N10MDB SSDI

获取价格

Power Field-Effect Transistor, 56A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Met
SFF75N10MTX SSDI

获取价格

Power Field-Effect Transistor, 56A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Met
SFF75N10MTXV SSDI

获取价格

暂无描述
SFF75N10MU SSDI

获取价格

Power Field-Effect Transistor, 75A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Met