Datasheet > SFF7N60

SFF7N60

更新时间： 2024-01-22 20:21:00

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
7页	668K
描述
Silicon N-Channel MOSFET

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SFF7N60 数据手册

SFF7N60

Silicon N-Channel MOSFET

Features

■ 7A,600V,R_DS(on)(Max 1.0Ω)@V_GS=10V

■

Ultra-low Gate Charge(Typical 29nC)

Fast Switching Capability

100%Avalanche Tested

■ Isolation Voltage(V_ISO=4000V AC)

■

Maximum Junction Temperature Range(150℃)

General Description

This Power MOSFET is produced using Winsemi's advanced

planar stripe,VDMOS technology. This latest technology has been

especially designed to minimize on -state resistance,have a high

rugged avalanche characteristics. This devices is specially well

suited for half bridge and full bridge resonant topology line a

electronic lamp ballast,high efficiency switched mode power

supplies, active power factor correction.

Absolute Maximum Ratings

Symbol

Parameter

Value

600

Units

V_DSS

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

Drain Current Pulsed

I_D

4.1*

I_DM

V_GS

E_AS

(Note1)

Gate to Source Voltage

±30

240

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv /dt

Total Power Dissipation(@Tc=25℃)

Derating Factor above 25℃

Junction and Storage Temperature

Channel Temperature

(Note2)

(Note1)

(Note3)

V/ ns

E_AR

dv/dt

4.5

P_D

0.38

-55~150

300

W/℃

℃

T_J,T_stg

T_L

℃

*Drain current limited by junction temperature

Thermal Characteristics

Value

Symbol

Parameter

Units

Min

Typ

Max

2.6

R_QJC

R_QJA

Thermal Resistance , Junction -to -Case

Thermal Resistance , Junction-to -Ambient

℃

62.5

℃

Rev.A Jun.2011

12 3 4 5 6 7

中文翻译

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