Datasheet > SFF75N10MD

SFF75N10MD

更新时间： 2023-01-02 23:50:17

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	123K
描述
Power Field-Effect Transistor, 75A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN

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SFF75N10MD 数据手册

SFF75N10M

SFF75N10Z

SOLID STATE DEVICES, INC.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

75 AMP

100 VOLTS

0.025 Ω

DESIGNER'S DATA SHEET

FEATURES:

N-CHANNEL

• Rugged construction with poly silicon gate

POWER MOSFET

• low RDS (on) and high transconductance

• Excellent high temperature stability

• Very fast switching speed

TO-254 (M)

TO-254Z (Z)

• Fastrecoveryandsuperiordv/dtperformance

• Increased reverse energy capability

• Low input and transfer capacitance for easy paralleling

• Ceramic seals for improved hermeticity

• Hermetically sealed package

• TX, TXV and Space Level screening available

• Replaces: IXTH75N10Types

MAXIMUM RATINGS

CHARACTERISTIC

Drain to Source Voltage

SYMBOL

VALUE

100

UNIT

Volts

Gate to Source Voltage

+ 20

Volts

Amps

^oC

56^1/

-55 to +150

0.83

Continuous Drain Current

Operating and Storage Temperature

Thermal Resistance, Junction to Case

stg

^oC/W

Watts

0JC

@ TC = 25^oC

@ TC = 55^oC

150

Total Device Dissipation

114

Repetitive Avalanche Energy

E_AR

CASE OUTLINE: TO-254 (Sufix M)

CASE OUTLINE: TO-254Z (Sufix Z)

.149

.800

.790

Pin Out:

.500 MIN

.150

.545

.555

.139

Pin Out:

2x Ø

.545

.535

.140

.535

.500

.140

.125

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

.155

.145

.275

.255

.155

.145

.545

.535

.305

.295

1.090 .820 .545

1.050 .790 .535

.305

.295

.045

.035

3x Ø

.675±.010

.045

.035

.260

.240

.155

.140

.285

.265

SUFFIX: Z

.275

.255

.050

.040

SUFFIX: M

.260

.240

.155

.135

.055

.035

.190

.150

.170

MIN

SUFFIX: MD

SUFFIX: MU

.190

.150

.170

MIN

SUFFIX: ZD

SUFFIX: ZU

.190

.150

Available with Glass or Ceramic Seals. Contact Factory for details.

NOTE: All specifications are subject to change without notification.

DATA SHEET #: F00153F

SCDs for these devices should be reviewed by SSDI prior to release.

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与SFF75N10MD相关器件

型号	品牌	获取价格	描述	数据表
SFF75N10MDB	SSDI	获取价格	Power Field-Effect Transistor, 56A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Met
SFF75N10MTX	SSDI	获取价格	Power Field-Effect Transistor, 56A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Met
SFF75N10MTXV	SSDI	获取价格	暂无描述
SFF75N10MU	SSDI	获取价格	Power Field-Effect Transistor, 75A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Met
SFF75N10MUBS	SSDI	获取价格	Power Field-Effect Transistor, 56A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Met
SFF75N10MUBTX	SSDI	获取价格	Power Field-Effect Transistor, 56A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Met
SFF75N10MUBTXV	SSDI	获取价格	暂无描述
SFF75N10N	SSDI	获取价格	75 AMP 100 VOLTS 0.025 OHM N-Channel POWER MOSFET
SFF75N10P	SSDI	获取价格	75 AMP 100 VOLTS 0.025 OHM N-Channel POWER MOSFET
SFF75N10Z	SSDI	获取价格	75 AMP 100 VOLTS 0.025 OHM N-Channel POWER MOSFET

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