SFF7002KA2GWS

更新时间： 2024-02-21 22:56:41

品牌	Logo	应用领域
SSDI		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
2页	177K
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SFF7002KA2GWS 数据手册

SFF7002KA2GW

Dual Microminiature Package

300 mA 60 Volts 2 Ω

Dual N-Channel Logic Level

TrenchFET MOSFET

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

SFF7002KA2 __ __

│

Features:

└ Screening ^2/__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

•

Low On-resistance, < 2 ohm

Low Input Capacitance, < 25 pF

Low threshold voltage, < 2 V

Fast switching, < 25 ns

└ Package ^3/GW = GULLWING

TX, TXV, and S-Level Screening Available.

Consult Factory

Maximum Ratings

Symbol

Value

Units

Gate – Source Voltage

Drain to Source Voltage

Continuous Drain Current

V_GS

V_DS

300

190

800

350

500

Volts

T_A= 25^oC

I_D

I_DM

T_A= 100^oC

Instantaneous (pulsed) Drain Current, Tj limited

Power Dissipation @ T_A= 25^oC

ºC/W

ºC

Per Device

Total

P_D

Maximum Thermal Resistance, Junction to PCB

Operating & Storage Temperature

250

R_ΘJ-PCB

T_{OP &}T_STG

-65 to +200

PACKAGE OUTLINE: GULLWING (GW)

2x .050

(=.100)

.015

3x .015

6x .030

6x .010

.015±.010

S S D I

5x R.018

.025

.350

.107

.125

.034

.193

±.010

.040

±.010

.107

.130

.010

6x R.010

.033

.035

NOTE: All specifications are subject to change without notification.

DATA SHEET #: FT0024A

DOC

SCD's for these devices should be reviewed by SSDI prior to release.

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