5秒后页面跳转
SEMIX553GAR128DS_09 PDF预览

SEMIX553GAR128DS_09

更新时间: 2024-11-05 06:11:07
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
6页 414K
描述
SPT IGBT Modules

SEMIX553GAR128DS_09 数据手册

 浏览型号SEMIX553GAR128DS_09的Datasheet PDF文件第2页浏览型号SEMIX553GAR128DS_09的Datasheet PDF文件第3页浏览型号SEMIX553GAR128DS_09的Datasheet PDF文件第4页浏览型号SEMIX553GAR128DS_09的Datasheet PDF文件第5页浏览型号SEMIX553GAR128DS_09的Datasheet PDF文件第6页 
SEMiX553GAR128Ds  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
IGBT  
VCES  
1200  
533  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
IC  
Tj = 150 °C  
379  
ICnom  
ICRM  
VGES  
300  
ICRM = 2xICnom  
600  
-20 ... 20  
SEMiX® 3s  
SPT IGBT Modules  
SEMiX553GAR128Ds  
Features  
VCC = 600 V  
VGE 20 V  
VCES 1200 V  
Tj = 125 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 150  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
421  
289  
A
A
Tj = 150 °C  
IFnom  
IFRM  
IFSM  
Tj  
300  
A
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
600  
A
2300  
A
• Homogeneous Si  
-40 ... 150  
°C  
• SPT = Soft-Punch-Through technology  
• VCE(sat) with positive temperature  
coefficient  
• High short circuit capability  
• UL recognised file no. E63532  
Freewheeling diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
521  
347  
A
A
Tj = 150 °C  
IFnom  
300  
A
Typical Applications*  
IFRM  
IFSM  
Tj  
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
600  
A
2300  
A
• AC inverter drives  
• UPS  
-40 ... 150  
°C  
Module  
It(RMS)  
Tstg  
• Electronic welders up to 20 kHz  
600  
-40 ... 125  
4000  
A
°C  
V
Visol  
AC sinus 50Hz, t = 1 min  
Characteristics  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
IC = 300 A  
VCE(sat)  
Tj = 25 °C  
1.9  
2.1  
2.35  
2.55  
V
V
V
GE = 15 V  
Tj = 125 °C  
chiplevel  
Tj = 25 °C  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
VCE0  
rCE  
1
1.15  
1.05  
4.0  
V
V
0.9  
3.0  
4.0  
5
mΩ  
mΩ  
V
VGE = 15 V  
5.0  
VGE(th)  
ICES  
VGE=VCE, IC = 12 mA  
Tj = 25 °C  
4.5  
6.5  
0.1  
0.3  
mA  
mA  
nF  
nF  
nF  
nC  
VGE = 0 V  
CE = 1200 V  
V
Tj = 125 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
Cies  
Coes  
Cres  
QG  
28.3  
1.86  
1.17  
2880  
1.33  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
RGint  
GAR  
© by SEMIKRON  
Rev. 9 – 16.12.2009  
1

与SEMIX553GAR128DS_09相关器件

型号 品牌 获取价格 描述 数据表
SEMIX553GB128D SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GB128D_07 SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GB128DS SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GB128DS_06 SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GB128DS_07 SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GB128DS_09 SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GD128D SEMIKRON

获取价格

Insulated Gate Bipolar Transistor, 540A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 33, 33
SEMIX553GD128DC SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GD128DC_06 SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GD128DC_07 SEMIKRON

获取价格

SPT IGBT Modules