Datasheet > SD103BWS

SD103BWS

更新时间： 2024-11-18 12:27:59

品牌	Logo	应用领域
戈采 - FCI		肖特基二极管
页数	文件大小	规格书
2页	263K
描述
350mA Small Single Surface Mounted Schottky Diode Low Reverse Capacitance

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中文翻译

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技术参数
数据手册

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SD103BWS 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.75	Is Samacsys：	N
Base Number Matches：	1

SD103BWS 数据手册

350mA Small Single

Data Sheet

Surface Mounted Schottky Diode

Mechanical Dimensions

Description

1.70

2.65

SOD-323

Unit: mm

FEATURES

MARKING: SD103AWS: S4

SD103BWS: S5

Low Forward Voltage Drop

SD103CWS: S6

Guard Ring Construction for Transient Protection

Negligible Reverse Recovery Time

Low Reverse Capacitance

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃

Parameter

Peak Repetitive Peak reverse voltage

Working Peak

Symbol

V_RRM

V_RWM

V_R

SD103AWS

SD103BWS

SD103CWS

Unit

DC Blocking

Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

350

Forward Continuous Current

Repetitive Peak Forward Current @t≤1.0s

Power Dissipation

I_FRM

1.5

200

℃/W

℃

Thermal Resistance Junction to Ambient

Storage temperature

R_θJA

T_STG

300

-65~+125

Electrical Ratings @T_A=25℃

Parameter

Symb

Min.

Typ.

Max. Unit

Conditions

Reverse Breakdown Voltage

SD103AWS

IR=10µA

I_F=20mA

I_F=200mA

V _(BR)R

SD103BWS

SD103CWS

V_F

0.37

Forward voltage

0.60

Reverse current

SD103AWS

V_R=30V

V_R=20V

V_R=10V

I_RM

5.0

µA

SD103BWS

SD103CWS

Capacitance between terminals

C_T

t_rr

V_R=0V,f=1.0MHz

I_F=I_R=200mA

Reverse Recovery Time

Irr=0.1XI_R,R_L=100Ω

中文翻译

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