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SD103BWS-G3-18 PDF预览

SD103BWS-G3-18

更新时间： 2024-11-18 19:42:31
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 92K
描述
Rectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon, GREEN PACKAGE-2

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SD103BWS-G3-18 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：GREEN PACKAGE-2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.70Factory Lead Time：10 weeks
风险等级：5.04配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.37 VJESD-30 代码：R-PDSO-G2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：2 A元件数量：1
端子数量：2最高工作温度：125 °C
最低工作温度：-55 °C最大输出电流：0.35 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
最大功率耗散：0.2 W最大重复峰值反向电压：30 V
最大反向恢复时间：0.01 µs子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：10
Base Number Matches：1

SD103BWS-G3-18 数据手册

 浏览型号SD103BWS-G3-18的Datasheet PDF文件第2页浏览型号SD103BWS-G3-18的Datasheet PDF文件第3页浏览型号SD103BWS-G3-18的Datasheet PDF文件第4页 
SD103AWS-G, SD103BWS-G, SD103CWS-G  
www.vishay.com  
Vishay Semiconductors  
Small Signal Schottky Diodes  
FEATURES  
• The SD103 series is a metal-on-silicon Schottky  
barrier device which is protected by a PN  
junction guardring  
• The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,  
steering, biasing, and coupling diodes for fast  
switching and low logic level applications  
DESIGN SUPPORT TOOLS click logo to get started  
• Other applications are click suppression,  
efficient full wave bridges in telephone subsets,  
and blocking diodes in rechargeable low voltage  
battery systems  
Models  
Available  
MECHANICAL DATA  
• For general purpose applications  
Case: SOD-323  
• AEC-Q101 qualified available  
Weight: approx. 4.0 mg  
• Base P/N-G3 - green, commercial grade  
• Base P/N-HG3 - green, AEC-Q101 qualified  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PARTS TABLE  
PART  
ORDERING CODE  
CIRCUIT CONFIGURATION  
TYPE MARKING  
REMARKS  
SD103AWS-G3-08 or SD103AWS-G3-18  
SD103AWS-HG3-08 or SD103AWS-HG3-18  
SD103BWS-G3-08 or SD103BWS-G3-18  
SD103BWS-HG3-08 or SD103BWS-HG3-18  
SD103CWS-G3-08 or SD103CWS-G3-18  
SD101CWS-HG3-08 or SD101CWS-HG3-18  
SD103AWS-G  
Single  
Z6  
SD103BWS-G  
SD103CWS-G  
Single  
Single  
Z7  
Z8  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
VRRM  
VRRM  
VRRM  
IF  
VALUE  
40  
UNIT  
V
SD103AWS-G  
SD103BWS-G  
SD103CWS-G  
Repetitive peak reverse voltage  
30  
V
20  
V
Forward continuous current (1)  
Single cycle surge  
350  
2
mA  
A
10 μs square wave  
IFSM  
Power dissipation (1)  
Ptot  
200  
mW  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
500  
UNIT  
K/W  
°C  
Junction temperature  
125  
Operating temperature range  
Storage temperature range  
Top  
-55 to +125  
-55 to +150  
°C  
Tstg  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
Rev. 1.6, 01-Jun-17  
Document Number: 81142  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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