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SD103BWS-Q1 PDF预览

SD103BWS-Q1

更新时间: 2024-11-19 18:06:59
品牌 Logo 应用领域
安邦 - ANBON /
页数 文件大小 规格书
3页 844K
描述
SOD-323

SD103BWS-Q1 数据手册

 浏览型号SD103BWS-Q1的Datasheet PDF文件第2页浏览型号SD103BWS-Q1的Datasheet PDF文件第3页 
SD103AWS/BWS/CWS-Q1  
Small Signa  
l
350mA Surface Mount  
Schottky Diode-20V-40V  
Package outline  
Features  
Low current rectification and high speed switching.  
Extremely small surface mount type.  
SOD-323  
Low forward voltage drop.  
Silicon epitaxial planar chip, metal silicon junction.  
Lead-free parts for green partner, exceeds environmental  
standards of MIL-STD-19500 /228  
0.071(1.80)  
0.063(1.60)  
Compliant to Halogen-free  
Suffix "-Q1" for AEC-Q101  
0.039(1.00)  
0.031(0.80)  
Mechanical data  
Epoxy:UL94-V0 rated flame retardant  
Case : Molded plastic, SOD-323  
Terminals : Solder plated, solderable per  
MIL-STD-750, Method 2026  
0.108(2.75)  
0.096(2.45)  
Polarity : Indicated by cathode band  
Mounting Position : Any  
Dimensions in inches and (millimeters)  
Maximum ratings (AT TA=25oC unless otherwise noted)  
Symbol  
SD103AWS-Q1  
SD103CWS-Q1  
PARAMETER  
CONDITIONS  
SD103BWS-Q1  
UNIT  
V
Peak repetitive reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
VR(RMS)  
IF(AV)  
40  
28  
30  
20  
14  
RMS reverse voltaget  
V
21  
350  
Average rectified output current  
Non-repetitive peak forward surge current  
Total device dissipation  
mA  
@ t < 1.0s  
IFSM  
PD  
1.5  
A
mW  
200  
RθJA  
TJ  
Junction to ambient  
625  
°C/W  
oC  
Thermal resistance  
-55 ~ +125  
Operating temperature  
oC  
TSTG  
Storage temperature  
-65 ~ +125  
TYP.  
Electrical Characteristics(AT TA=25oC unless otherwise noted)  
Symbol  
MIN.  
MAX.  
UNIT  
V
PARAMETER  
CONDITIONS  
I =100uA,  
SD103AWS-Q1  
SD103BWS-Q1  
SD103CWS-Q1  
40  
30  
20  
R
V(BR)R  
Reverse breakdown voltage  
I =100uA  
,
R
I =100uA,  
R
IF = 20mA  
0.37  
0.60  
Forward voltage  
Reverse current  
VF  
IR  
V
IF = 200mA  
V = 30 V SD103AWS-Q1  
,
VRR = 20 V, SD103BWS-Q1  
5.0  
uA  
V = 10 V  
, SD103CWS-Q1  
R
VR = 0 V, f = 1.0MHz  
50  
10  
Typical Junction capacitance  
Reverse recover time  
pF  
ns  
CJ  
trr  
IF = IR = 200mA, Irr = 0.1 X IR,  
RL = 100 OHM  
http://www.anbonsemi.com  
TEL:+86-755-23776891  
FAX:+86-755-81482812  
Document ID  
AS-1160015  
Issued Date  
2003/03/08  
Revised Date  
2021/10/18  
Revision  
E
Page.  
3
Page 1  

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