Datasheet > SD103BWS-HG3-18

SD103BWS-HG3-18

更新时间： 2024-11-19 00:58:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	81K
描述
Small Signal Schottky Diodes

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中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SD103BWS-HG3-18 数据手册

SD103AWS-G, SD103BWS-G, SD103CWS-G

www.vishay.com

Vishay Semiconductors

Small Signal Schottky Diodes

FEATURES

• The SD103 series is a metal-on-silicon Schottky

barrier device which is protected by a PN

junction guardring

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing, and coupling diodes for fast

switching and low logic level applications

MECHANICAL DATA

• Other applications are click suppression,

efficient full wave bridges in telephone subsets,

and blocking diodes in rechargeable low voltage

battery systems

Case: SOD-323

Weight: approx. 4.0 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

• For general purpose applications

• AEC-Q101 qualified available

• Base P/N-G3 - green, commercial grade

• Base P/N-HG3 - green, AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PARTS TABLE

PART

ORDERING CODE

INTERNAL CONSTRUCTION

TYPE MARKING

REMARKS

SD103AWS-G3-08 or SD103AWS-G3-18

SD103AWS-HG3-08 or SD103AWS-HG3-18

SD103BWS-G3-08 or SD103BWS-G3-18

SD103BWS-HG3-08 or SD103BWS-HG3-18

SD103CWS-G3-08 or SD103CWS-G3-18

SD101CWS-HG3-08 or SD101CWS-HG3-18

SD103AWS-G

Single diode

SD103BWS-G

SD103CWS-G

Single diode

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

V_RRM

I_F

VALUE

UNIT

SD103AWS-G

SD103BWS-G

SD103CWS-G

Repetitive peak reverse voltage

Forward continuous current ⁽¹⁾

Single cycle surge

350

10 μs square wave

I_FSM

Power dissipation ⁽¹⁾

P_tot

200

Note

(1)

Valid provided that electrodes are kept at ambient temperature

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

Thermal resistance junction to ambient air ⁽¹⁾

TEST CONDITION

SYMBOL

R_thJA

T_j

VALUE

500

UNIT

K/W

°C

Junction temperature

125

Operating temperature range

Storage temperature range

T_op

-55 to +125

-55 to +150

°C

T_stg

°C

Note

(1)

Valid provided that electrodes are kept at ambient temperature

Rev. 1.4, 21-Nov-13

Document Number: 81142

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

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与SD103BWS-HG3-18相关器件

型号	品牌	获取价格	描述	数据表
SD103BWSL	MCC	获取价格	Tape&Reel: 3Kpcs/Reel;
SD103BWSQ	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
SD103BWSQ	YANGJIE	获取价格	SOD-323
SD103BWS-Q1	ANBON	获取价格	SOD-323
SD103BWSQ-7-F	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
SD103BWS-T1	WTE	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
SD103BWS-T1	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC
SD103BWS-T1-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC
SD103BWS-T3	WTE	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
SD103BWS-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC

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