Datasheet > SD103BW-T1-LF

SD103BW-T1-LF

更新时间： 2024-11-21 21:20:31

品牌	Logo	应用领域
WTE		光电二极管
页数	文件大小	规格书
4页	60K
描述
Rectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

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数据手册

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SD103BW-T1-LF 数据手册

WTE

POWER SEMICONDUCTORS

SD103AW – SD103CW

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

ꢀ

Low Turn-on Voltage

ꢀ

Fast Switching

PN Junction Guard Ring for Transient and

ESD Protection

Designed for Surface Mount Application

Plastic Material – UL Recognition Flammability

Classification 94V-O

SOD-123

Dim

Min

3.6

2.5

1.4

0.5

—

Max

3.9

ꢀ

2.8

1.8

0.7

0.2

0.4

0.95

—

Mechanical Data

ꢀ

1.35

0.12

Case: SOD-123, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

ꢀ

All Dimensions in mm

ꢀ

Polarity: Cathode Band

Weight: 0.01 grams (approx.)

Marking: Device Code, See Page 3

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Maximum Ratings @T_A=25°C unless otherwise specified

Characteristic

Symbol

SD103AW

SD103BW

SD103CW

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

V^RWM

V^R

Forward Continuous Current (Note 1)

IFSM

350

2.0

Non-Repetitive Peak Forward Surge Current

Power Dissipation

@ t < 1.0s

410

°C/W

°C

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

RθJA

Tj, TSTG

300

-65 to +125

Electrical Characteristics @T_A=25°C unless otherwise specified

Characteristic

Symbol

All Types

Unit

Test Condition

0.37

0.60

@ I^F= 20mA

@ I^F= 200mA

Forward Voltage Drop

VFM

Peak Reverse Leakage Current

Typical Junction Capacitance

IRM

5.0

µA

@ Rated DC Blocking Voltage

V_R= 0V, f = 1.0MHz

I^F= IR = 50mA to 200mA

I^RR= 0.1 x IR, RL = 100Ω

Typical Reverse Recovery Time

trr

Note: 1. Valid provided that terminals are kept at ambient temperature.

SD103AW – SD103CW

1 of 4

12 3 4

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