SD103C

更新时间： 2024-11-21 04:32:31

品牌	Logo	应用领域
EIC		二极管
页数	文件大小	规格书
2页	34K
描述
SCHOTTKY BARRIER DIODES

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SD103C 数据手册

SCHOTTKY BARRIER DIODES

SD103A - SD103C

DO - 35 Glass

(DO-204AH)

FEATURES :

• For general purpose applications

• The SD103 series is a Metal-on-silicon Schottky

barrier device which is protected by a PN junction

guard ring.

1.00 (25.4)

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing and coupling diodes for fast

switching and low logic level applications.

• Other applications are click suppression, efficient

full wave bridges in telephone subsets, and

blocking diodes in rechargeable low voltage

battery systems.

0.079(2.0 )max.

min.

0.150 (3.8)

Cathode

max.

Mark

1.00 (25.4)

0.020 (0.52)max.

min.

• These diodes are also available in the MiniMELF case

with type designations LL103A thru LL103C.

• Pb / RoHS Free

MECHANICAL DATA :

Case: DO-35 Glass Case

Weight: approx. 0.13g

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)

Parameter

Symbol

Value

Unit

SD103A

SD103B

SD103C

V_RRM

Repetitive Peak Reverse Voltage

I_FSM

P_D

Single Cycle Surge 60 Hz Sine Wave

Power Dissipation (Infinite Heatsink)

Thermal Resistance Junction to Ambient Air

Junction Temperature

°C/mW

°C

400⁽¹⁾

0.3⁽¹⁾

125⁽¹⁾

-55 to + 150 ⁽¹⁾

R_q

T_J

T_S

Storage temperature range

°C

Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Test Condition

Min

Typ

Max

Unit

Parameter

Symbol

V_R= 30 V

SD103A

SD103B

SD103C

I_R

V_R= 20 V

Reverse Current

V_R= 10 V

I_F= 20mA

0.37

0.6

V_F

Forward Voltage Drop

Junction Capacitance

Reverse Recovery Time

I_F= 200mA

V_R= 0 V, f = 1MHz

I_F= I_R= 50mA to 200mA

recover to 0.1I_R

Ctot

Trr

Page 1 of 2

Rev. 02 : March 24, 2005

中文翻译

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