5秒后页面跳转
SD103C{TAPE-REEL} PDF预览

SD103C{TAPE-REEL}

更新时间: 2024-01-26 18:52:40
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
3页 69K
描述
Rectifier Diode, Schottky, 1 Element, Silicon

SD103C{TAPE-REEL} 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PDSO-G2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:0.65Is Samacsys:N
其他特性:LOW POWER LOSS配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.37 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:1.5 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.35 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.4 W认证状态:Not Qualified
最大重复峰值反向电压:20 V最大反向恢复时间:0.01 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

SD103C{TAPE-REEL} 数据手册

 浏览型号SD103C{TAPE-REEL}的Datasheet PDF文件第2页浏览型号SD103C{TAPE-REEL}的Datasheet PDF文件第3页 
SD103A - SD103C  
SCHOTTKY BARRIER DIODE  
Features  
·
·
Low Forward Voltage Drop  
A
B
A
Guard Ring Construction for Transient  
Protection  
·
·
Low Reverse Recovery Time  
Low Reverse Capacitance  
C
D
Mechanical Data  
DO-35  
Min  
25.40  
¾
·
·
Case: DO-35, Glass  
Dim  
A
Max  
Leads: Solderable per MIL-STD-202,  
Method 208  
¾
B
4.00  
0.60  
2.00  
·
·
·
Marking: Type Number  
Polarity: Cathode Band  
Weight: 0.13 grams (approx.)  
C
¾
D
¾
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
SD103A  
40  
SD103B  
SD103C  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
V
30  
20  
14  
VR(RMS)  
IFM  
V
mA  
A
RMS Reverse Voltage  
28  
21  
350  
1.0  
Forward Continuous Current  
Repetitive Peak Forward Current  
IFRM  
@ t £ 1.0s  
Non-Repetitive Peak Forward Surge Current  
8.3 ms Half Sine Wave  
IFSM  
15  
A
Pd  
RqJA  
Tj  
Power Dissipation  
400  
300  
mW  
K/W  
°C  
Thermal Resistance, Junction to Ambient Air  
Operating Junction Temeperature  
Storage Temperature Range  
125  
TSTG  
-55 to +150  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Typ  
MaxUnit  
Test  
Condition  
Reverse Breakdown Voltage  
SD103A  
SD103B  
SD103C  
40  
30  
20  
V(BR)R  
IRS = 100mA (pulsed)  
¾
¾
V
V
IF = 20mA  
IF = 200mA  
0.37  
0.60  
VFM  
Maximum Forward Voltage Drop  
Maximum Peak Reverse Current  
¾
¾
¾
VR = 30V  
SD103A  
SD103B  
SD103C  
IRM  
V
R = 20V  
R = 10V  
¾
5.0  
mA  
V
VR = 0V, f = 1.0MHz  
Cj  
trr  
Junction Capacitance  
¾
¾
50  
10  
¾
¾
pF  
ns  
IF = IR = 50mA to 200mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
DS11009 Rev. 11 - 2  
1 of 3  
SD103A - SD103C  

与SD103C{TAPE-REEL}相关器件

型号 品牌 获取价格 描述 数据表
SD103C-B RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 0.35A, 20V V(RRM), Silicon, DO-35, HERMETIC SEALED,
SD103C-F RECTRON

获取价格

Rectifier Diode,
SD103CL BL Galaxy Electrical

获取价格

Schottky Barrier Diode
SD103CL BL Galaxy Electrical

获取价格

0.35A,20V,Surface Mount Small Signal Schottky Diodes
SD103CM3 GXELECTRONICS

获取价格

Schottky Barrier Diode
SD103CMM FCI

获取价格

350 mA Surface Mounted Schottky Barrier Rectifiers Low Forward Voltage Drop
SD103C-TAP VISHAY

获取价格

Small Signal Schottky Barrier Diodes
SD103C-TP MCC

获取价格

Rectifier Diode, Schottky, 1 Element, 20V V(RRM), Silicon, DO-35, GLASS PACKAGE-2
SD103C-TR VISHAY

获取价格

Small Signal Schottky Barrier Diodes
SD103CW PANJIT

获取价格

SURFACE MOUNT SCHOTTKY BARRIER DIODES