SD103BW-V

更新时间： 2024-11-21 06:10:35

品牌	Logo	应用领域
威世 - VISHAY		小信号肖特基二极管
页数	文件大小	规格书
5页	130K
描述
Small Signal Schottky Diodes

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中文翻译

获取价格

数据手册

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SD103BW-V 数据手册

SD103AW-V/103BW-V/103CW-V

Vishay Semiconductors

Small Signal Schottky Diodes

Features

• The low forward voltage drop and fast

switching make it ideal for protection of

MOS devices, steering, biasing, and cou-

pling diodes for fast switching and low

logic level applications.

• Other applications are click suppression, efficient

full wave bridges in telephone subsets, and block-

ing diodes in rechargeable low voltage battery sys-

tems.

17431

• The SD103 series is a metal-on-silicon Schottky

barrier device which is protected by a PN junction

guard ring.

• This diode is also available in the MiniMELF case

with the type designations LL103A to LL103C,

DO35 case with the type designations SD103A to

SD103C and SOD323 case with type designations

SD103AWS-V to SD103CWS-V.

• For general purpose applications.

• Lead (Pb)-free component

Mechanical Data

Case: SOD123 Plastic case

Weight: approx. 10.3 mg

Packaging Codes/Options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box

GS08/3 k per 7" reel (8 mm tape), 15 k/box

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Parts Table

Part

Ordering code

Type Marking

Remarks

SD103AW-V

SD103AW-V-GS18 or SD103AW-V-GS08

SD103BW-V-GS18 or SD103BW-V-GS08

SD103CW-V-GS18 or SD103CW-V-GS08

Tape and Reel

SD103BW-V

SD103CW-V

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

V_RRM

Value

Unit

Peak reverse voltage

SD103AW-V

SD103BW-V

SD103CW-V

V_RRM

P_tot

400¹⁾

Power dissipation

(Infinite heat sink)

I_FSM

Single cycle surge

10 µs square wave

Thermal Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

K/W

300¹⁾

125¹⁾

Thermal resistance junction to ambient air

R_thJA

T_j

Junction temperature

°C

- 55 to + 150¹⁾

T_stg

Storage temperature range

¹⁾Valid provided that electrodes are kept at ambient temperature

Document Number 85681

Rev. 1.4, 18-Sep-06

www.vishay.com

12 3 4 5

中文翻译

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