Datasheet > SD103C-B

SD103C-B

更新时间： 2023-02-26 14:18:54

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
5页	94K
描述
Rectifier Diode, Schottky, 1 Element, 0.35A, 20V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2

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SD103C-B 数据手册

SD103A

THRU

SD103C

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES

Low Forward Voltage Drop

Guard Ring Construction for Transient Protection

Low Reverse Recovery Time

Low Reverse Capacitance

Lead free in compliance with EU RoHS 2011/65/EU directive

DO-35

MECHANICAL DATA

(

)

.022 0.56

Case: Molded Glass DO-35

DIA.

(

.018 0.45

Terminals: Solderable per MIL-STD-750, Method 2026

(

)

1.02 26.0

MIN.

(

)

.141 3.6

(

.118 3.0)

(

)

.083 2.1

DIA.

(

)

.063 1.6

(

)

1.02 26.0

MIN.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Dimensions in inches and (millimeters)

MAXIMUM RATINGES ( @ TA = 25^oC unless otherwise noted )

PARAMETER

Marking Code

SYMBOL

SD103A

SD103B

SD103C

UNITS

103A

103B

103C

Peak Repetitive Reverse Voltage

RMS Reverse Voltage

V_RRM

V_RMS

I_F(AV)

I_FSM

P_D

Max. Average Rectified Current

Peak For ward Surge Current, t <0.3ms

Power Dissipation Derate Above 25^OC

350

400

Maximum For ward Voltage, I_F= 20mA

I_F= 200mA

0.37

0.7

V_F

Maximum Reverse Current

Typical Junction Capacitance ( Note 1)

Typical Reverse Recovery (Note 2)

Typical Thermal Resistance

Storage Temperature Range

Operating Junction Temperature Range

NOTE :

I_R

5@30V

5@20V

5@10V

C_J

t_rr

R_QJA

T_STG

T_J

250

^OC / W

^OC

-65 t o +175

-55 t o +125

^OC

1. CJ at V

=0, f=1MHZ

=200mA, RL=100Ω

2018-11/21

REV:O

2. From I =50mA to I

12 3 4 5

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