Datasheet > SD103BWS-T3

SD103BWS-T3

更新时间： 2024-11-17 22:13:55

品牌	Logo	应用领域
WTE		肖特基二极管
页数	文件大小	规格书
3页	43K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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SD103BWS-T3 数据手册

WTE

POWER SEMICONDUCTORS

SD103AWS – SD103CWS

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Low Turn-on Voltage

Fast Switching

PN Junction Guard Ring for Transient and

ESD Protection

Designed for Surface Mount Application

Plastic Material – UL Recognition Flammability

Classification 94V-O

SOD-323

Min

Dim

Max

2.70

1.95

1.35

0.35

0.15

0.95

—

2.30

1.75

1.15

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

0.25

0.05

Mechanical Data

0.70

0.30

Case: SOD-323, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

All Dimensions in mm

Weight: 0.004 grams (approx.)

Marking: SD103AWS S6

SD103BWS S7

SD103CWS S8

Maximum Ratings ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

SD103AWS

SD103BWS

SD103CWS

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

Forward Continuous Current (Note 1)

I^F

I^FSM

350

2.0

Non-Repetitive Peak Forward Surge Current

Power Dissipation (Note 1)

@ t < 1.0s

P^d

200

°C/W

°C

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JA

T^j, T^STG

625

-55 to +125

Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

All Types

Unit

Test Condition

SD103AWS

SD103BWS

SD103CWS

Reverse Breakdown Voltage

V^(BR)R

@ I^R= 10µA, t^p< 300µS

0.37

0.60

@ I^F= 20mA

@ I^F= 200mA

Forward Voltage Drop

V^FM

Peak Reverse Leakage Current

Typical Junction Capacitance

I^RM

C^j

5.0

µA

@ Rated DC Blocking Voltage

V_R= 0V, f = 1.0MHz

I^F= I^R= 200mA

I^RR= 0.1 x I^R, R^L= 100ꢀ

Typical Reverse Recovery Time

t^rr

Note: 1. Valid provided that terminals are kept at ambient temperature.

SD103AWS – SD103CWS

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