SD103BWS-V-G

更新时间： 2024-09-26 09:31:27

品牌	Logo	应用领域
威世 - VISHAY		小信号肖特基二极管
页数	文件大小	规格书
4页	71K
描述
Small Signal Schottky Diodes

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SD103BWS-V-G 数据手册

SD103AWS-V-G, SD103BWS-V-G, SD103CWS-V-G

Vishay Semiconductors

Small Signal Schottky Diodes

Features

• The SD103 series is a metal-on-silicon

Schottky barrier device which is

protected by a PN junction guard ring

• The low forward voltage drop and fast

switching make it ideal for protection of

MOS devices, steering, biasing, and

coupling diodes for fast switching and

low logic level applications

20145

• Other applications are click suppression,

efficient full wave bridges in telephone subsets,

and blocking diodes in rechargeable low voltage

battery systems

Mechanical Data

Case: SOD-323

Weight: approx. 4.0 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

• For general purpose applications

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Parts Table

Part

SD103AWS-V-G

SD103BWS-V-G

SD103CWS-V-G

Ordering code

Type marking

Remarks

SD103AWS-V-G-18 or SD103AWS-V-G-08

SD103BWS-V-G-18 or SD103BWS-V-G-08

SD103CWS-V-G-18 or SD103CWS-V-G-08

Tape and reel

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Part

Symbol

Value

Unit

V_RRM

I_F

SD103AWS-V-G

SD103BWS-V-G

SD103CWS-V-G

Peak reverse voltage

350 ¹⁾

Forward continuous current

Single cycle surge

I_FSM

P_tot

10 µs square wave

200 ¹⁾

Power dissipation

Note

¹⁾Valid provided that electrodes are kept at ambient temperature

Thermal Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

R_thJA

Value

Unit

K/W

°C

500 ¹⁾

125

Thermal resistance junction to ambient air

Junction temperature

T_j

T_stg

Storage temperature range

- 55 to + 150

°C

Note

¹⁾Valid provided that electrodes are kept at ambient temperature

** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

This document is subject to change without notice.

Document Number 81142

Rev. 1.1, 13-May-11

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

下载PDF

与SD103BWS-V-G相关器件

型号	品牌	获取价格	描述	数据表
SD103BWS-V-GS08	VISHAY	获取价格	Small Signal Schottky Diodes
SD103BWS-V-GS18	VISHAY	获取价格	Small Signal Schottky Diodes
SD103BW-T1	WTE	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
SD103BW-T1-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC
SD103BW-T3	WTE	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
SD103BW-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC
SD103BW-V	VISHAY	获取价格	Small Signal Schottky Diodes
SD103BW-V-GS08	VISHAY	获取价格	Small Signal Schottky Diodes
SD103BW-V-GS18	VISHAY	获取价格	Small Signal Schottky Diodes
SD103BX	BL Galaxy Electrical	获取价格	0.35A,30V,Surface Mount Small Signal Schottky Diodes

与SD103BWS-V-G相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

9
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

8
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

12
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

19

产品中心

服务支持

精选活动

关于我们

帮助中心

SD103BWS-V-G

SD103BWS-V-G 数据手册

与SD103BWS-V-G相关器件

与SD103BWS-V-G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SD103BWS-V-G

SD103BWS-V-G 数据手册

与SD103BWS-V-G相关器件

与SD103BWS-V-G相关文章

您还可以找

您在本页遇到什么问题？