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SD103BWS-T1 PDF预览

SD103BWS-T1

更新时间: 2024-11-18 20:26:03
品牌 Logo 应用领域
SENSITRON 光电二极管
页数 文件大小 规格书
3页 88K
描述
Rectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-2

SD103BWS-T1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:R-PDSO-G2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.04Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.37 V
JESD-30 代码:R-PDSO-G2湿度敏感等级:1
最大非重复峰值正向电流:1.5 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.35 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向恢复时间:0.01 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SD103BWS-T1 数据手册

 浏览型号SD103BWS-T1的Datasheet PDF文件第2页浏览型号SD103BWS-T1的Datasheet PDF文件第3页 
SD103AWS - SD103CWS  
SCHOTTKY BARRIER SWITCHING DIODE  
SENSITRON  
SEMICONDUCTOR  
Data Sheet 2922, Rev. -  
Features  
·
·
Low Forward Voltage Drop  
Guard Ring Construction for  
Transient Protection  
SOD-323  
E
D
·
Negligible Reverse Recovery Time  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Dim  
A
MinMax  
2.30  
·
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
·
Low Reverse Capacitance  
2.70  
1.80  
1.40  
Ultra-Small Surface Mount Package  
B
1.60  
A B  
C
1.20  
Mechanical Data  
D
1.05 Typical  
·
·
·
Case: SOD-323, Plastic  
Polarity: Cathode Band  
G
E
0.25  
0.20  
0.10  
0.35  
0.40  
0.15  
G
H
Leads: Solderable per MIL-STD-202,  
Method 208  
C
H
J
0.05 Typical  
·
·
SD103AWS Marking: S4  
J
All Dimensions in mm  
SD103BWS Marking: S5 or S4  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
SD103CWS Marking: S6 or S5 or S4  
·
·
Weight: 0.004 grams (approx.)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
SD103AWS  
SD103BWS  
SD103CWS  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
V
40  
28  
30  
20  
14  
VR(RMS)  
IFM  
V
mA  
A
RMS Reverse Voltage  
21  
350  
Forward Continuous Current (Note 1)  
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s  
Power Dissipation (Note 1)  
IFSM  
1.5  
Pd  
200  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
625  
Tj, TSTG  
-65 to +125  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
I
I
I
R = 10mA  
Reverse Breakdown Voltage (Note 2)  
SD103AWS  
SD103BWS  
SD103CWS  
40  
30  
20  
V(BR)R  
¾
¾
V
R = 10mA  
R = 10mA  
IF = 20mA  
0.37  
0.60  
VFM  
Forward Voltage Drop  
Peak Reverse Current  
¾
¾
¾
¾
V
IF = 200mA  
SD103AWS  
SD103BWS  
SD103CWS  
VR = 30V  
IRM  
V
R = 20V  
R = 10V  
5.0  
mA  
V
VR = 0V, f = 1.0MHz  
Cj  
trr  
Junction Capacitance  
¾
¾
50  
10  
¾
¾
pF  
ns  
IF = IR = 200mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
Notes:  
1. Valid provided that leads are kept at ambient temperature.  
2. Test period <3000ms.  
221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

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