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SD103BWSFL PDF预览

SD103BWSFL

更新时间: 2024-11-19 01:11:43
品牌 Logo 应用领域
佑风微 - YFW /
页数 文件大小 规格书
3页 452K
描述
SCHOTTKY BARRIER DIODE

SD103BWSFL 数据手册

 浏览型号SD103BWSFL的Datasheet PDF文件第2页浏览型号SD103BWSFL的Datasheet PDF文件第3页 
SD103AWSFL THRU SD103CWFL SOD-323FL  
SCHOTTKY BARRIER DIODE  
FEATURES  
Pinning  
1.Cathode  
2.Anode  
1
2
Low Forward Voltage Drop  
Guard Ring Construction for Transient Protection  
Negligible Reverse Recovery Time  
Low Capacitance  
SOD-323FL  
Lead free in comply with EU RoHS 2011/65/EU directives  
Marking Code  
MECHANICAL DATA  
SD103AWSFL  
SD103BWSFL  
SD103CWSFL  
S4  
S5  
S6  
Case: SOD-323FL  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 4.5mg /0.00016oz  
Maximum Ratings and Electrical characteristics  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Symbols  
Parameter  
Units  
SD103AWSFL SD103BWSFL SD103CWSFL  
40  
28  
40  
30  
21  
30  
20  
14  
20  
V
V
V
Peak Repetitive Reverse Voltage  
RMS reverse voltage  
V
RRM  
RMS  
V
Working Peak Reverse Voltage  
V
DC  
Peak Forward Surge Current, 8.3ms Single Half Sine-  
wave Superimposed On Rated Load(JEDEC  
method)  
IFSM  
13  
A
IF=20mA  
0.37  
0.60  
Maximum Instantaneous Forward  
Voltage  
V
F
V
IF=200mA  
Power Dissipation  
200  
mW  
P
D
SD103AWSFL,VR=30V  
5
-
-
5
-
-
-
Reverse current  
SD103BWSFL,VR=20V  
SD103CWSFL,VR=10V  
IR  
uA  
°C/W  
V
-
5
Thermal Resistance, Junction to Ambient Air  
R
θJA  
300  
SD103AWSFL  
40  
30  
20  
Reverse voltage  
SD103BWSFL  
IR=100uA  
V
(BR)R  
SD103CWSFL  
Reverse recovery time IF=IR=200mA,Irr=0.1xIR,  
RL=100Ω  
10  
nS  
Trr  
Forward Continuons Current  
IFM  
350  
mA  
Total capacitance VR=0V.f=1MHZ  
Junction temperature  
C
tot  
50  
125  
pF  
°C  
°C  
T
j
Storage temperature  
T
stg  
-55 ~ +150  
www.yfwdiode.com  
Dongguan YFW Electronics Co, Ltd.  
1 / 3  

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