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SD103BWS PDF预览

SD103BWS

更新时间: 2024-11-20 06:10:35
品牌 Logo 应用领域
RECTRON 整流二极管肖特基二极管
页数 文件大小 规格书
3页 45K
描述
SCHOTTKY DIODES

SD103BWS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.04Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.35 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):265
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向恢复时间:0.01 µs
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SD103BWS 数据手册

 浏览型号SD103BWS的Datasheet PDF文件第2页浏览型号SD103BWS的Datasheet PDF文件第3页 
REECCTTRROONN  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
SD103BWS  
SCHOTTKY DIODES  
FEATURES  
Low Forward Voltage Drop  
*
*
*
*
Guard Ring Construction for Transient Protection  
Negligible Reverse Recovery Time  
Low Reverse Capacitance  
SOD-323  
MECHANICAL DATA  
* Case: Molded plastic  
.071(1.80)  
.063(1.60)  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
.055(1.40)  
.047(1.20)  
* Weight: 0.004 grams  
.106(2.70)  
.098(2.50)  
MAX.039(1.00)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
.004(.10)  
.000(.00)  
REF .019(0.46)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (@T =25OC unless otherwise noted)  
A
SYMBOL  
SD103BWS  
30  
UNITS  
Volts  
RATINGS  
Peak Repetitive Peak reverse voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RMR  
V
RWR  
V
R
V
21  
RMS Reverse Voltage  
R(RMS)  
Volts  
Maximum Forward Comtinuous Current  
Non-Repetitive Peak Forward Surge Current @t<1.0S  
I
350  
1.5  
mAmps  
Amps  
FM  
IFSM  
Maximum Power Dissipation  
P
200  
mW  
OC/W  
OC  
D
Thermal Resistance junction to ambient  
Operating and Storage Temperature Range  
RθJA  
T ,T  
300  
-65 to + 125  
J
STG  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
Reverse Breakdown Voltage  
SYMBOL  
V(BR)R  
MIN.  
30  
TYP.  
-
MAX.  
-
UNITS  
V
(IR=10µA)  
(V =20V)  
R
I
Reverse voltage leakage current  
Forward voltage  
-
-
-
5.0  
µA  
R
(I =20mA)  
F
-
-
0.37  
0.60  
V
F
V
(I =200mA)  
F
Capacitance between terminals  
Reverse Recovery Time  
C
T
-
-
-
50  
10  
pF  
ns  
(V =0V,f=1MHz)  
R
(I =I =200mA,R =  
F
R
L
trr  
-
100,I =0.1xI  
rr  
)
R
2006-3  

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