型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SCTW100N120G2AG | STMICROELECTRONICS |
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Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an | |
SCTW100N65G2AG | STMICROELECTRONICS |
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汽车级碳化硅功率MOSFET,650 V、100 A、20 mOhm(典型值,TJ = 2 | |
SCTW35N65G2V | STMICROELECTRONICS |
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碳化硅功率MOSFET,650 V、45 A、55 mOhm(典型值,TJ = 25 C) | |
SCTW35N65G2VAG | STMICROELECTRONICS |
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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an | |
SCTW40N120G2V | STMICROELECTRONICS |
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Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package | |
SCTW40N120G2VAG | STMICROELECTRONICS |
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汽车级碳化硅功率MOSFET,1200 V、33 A、75 mOhm(典型值,TJ = 2 | |
SCTW60N120G2 | STMICROELECTRONICS |
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Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package | |
SCTW60N120G2AG | STMICROELECTRONICS |
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Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 pack | |
SCTW70N120G2V | STMICROELECTRONICS |
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碳化硅功率MOSFET,650 V、100 A、22 mOhm(典型值,TJ = 150 | |
SCTW90N65G2V | STMICROELECTRONICS |
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碳化硅功率MOSFET,650 V、119 A、18 mOhm(典型值,TJ = 25 C |