Datasheet > SCTWA35N65G2V

SCTWA35N65G2V

更新时间： 2024-09-14 14:57:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	238K
描述
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package

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SCTWA35N65G2V 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
Factory Lead Time：	43 weeks 2 days	风险等级：	2.15
Base Number Matches：	1

SCTWA35N65G2V 数据手册

SCTWA35N65G2V

Datasheet

Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A

in an HiP247 long leads package

Features

DS(on)

max.

Order code

SCTWA35N65G2V

650 V

67 mΩ

45 A

•

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Very high operating junction temperature capability (T_J= 200 °C)

HiP247 long leads

Applications

D(2, TAB)

•

Switching mode power supply

DC-DC converters

Industrial motor control

G(1)

Description

This silicon carbide Power MOSFET device has been developed using ST’s

S(3)

advanced and innovative 2^ndgeneration SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.

AM01475v1_noZen

Product status link

SCTWA35N65G2V

Product summary

Order code

SCTWA35N65G2V

35N65G2V

Marking

Package

Packing

HiP247 long leads

Tube

DS12081 - Rev 2 - December 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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