Datasheet > SCTWA40N120G2V

SCTWA40N120G2V

更新时间： 2024-11-01 14:57:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	223K
描述
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

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SCTWA40N120G2V 数据手册

SCTWA40N120G2V

Datasheet

Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A

in an HiP247 long leads package

Features

DS(on)

max.

Order code

SCTWA40N120G2V

1200 V

100 mΩ

36 A

•

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Very high operating junction temperature capability (T_J= 200 °C)

HiP247 long leads

Applications

D(2, TAB)

•

Switching mode power supply

DC-DC converters

Industrial motor control

G(1)

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 2^ndgeneration SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.

S(3)

AM01475v1_noZen

Product status link

SCTWA40N120G2V

Product summary

Order code

Marking

SCTWA40N120G2V

SCT40N120G2V

HiP247 long leads

Tube

Package

Packing

DS13752 - Rev 2 - July 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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SCTWA90N65G2V	STMICROELECTRONICS	获取价格	Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long lead
SCTWA90N65G2V-4	STMICROELECTRONICS	获取价格	Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package